Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
DIBL  Drain-induced barrier lowering; parasitic short-channel effect in MOSFETs; results in reduced control of the gate voltage Vg over the transistor's current; causes Vds effect on transistor's threshold voltage VT.
Field Effect Transistor, FET  transistor in which output current (source-drain current)is controlled by the voltage applied to the gate which can be either an MOS structure (MOSFET), a p-n junction (JFET), or metal-semiconductor contact (MESFET); FET is an unipolar transistor, i.e. current is controlled by majority carriers only.
threshold voltage,VT  voltage applied to the gate of a field effect transistor (FET) that is necessary to open a conductive channel between source and drain; in the case of MOSFET voltage necessary for the inversion layer to be formed at the semiconductor surface.
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