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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
Czochralski crystal growth, CZ  process of obtaining single-crystal solids; the most common method for obtaining large diameter semiconductor wafers (e.g. 300 mm Si wafers); single crystal material is pulled out of the melt in which single-crystal seed is immersed and then slowly withdrawn; desired conductivity type and doping level is accomplished by adding dopants to the melt.
float-zone crystal growth, FZ  method used to form single crystal semiconductor substrates; alternative to CZ crystal growth process; polycrystalline material (typically in the form of a circular rod) is converted into single-crystal by zone heating (zone melting) starting at the plane where single crystal seed is contacting polycrystalline material; used to make Si wafers; results in very high purity (i.e. very high resistivity) single crystal Si; does not allow as large Si wafers as CZ does (200 mm and 300 mm); radial distribution of dopant in FZ wafer not as uniform as in CZ wafer; wafers used in high-end Si microelectronics are almost uniquely CZ grown.
ingot  circular in shape piece of single-crystal semiconductor material typically resulting from the Czochralski crystal growth process; ingot is shaped and then sliced, using high-precision diamond saw, into wafers used to manufacture semiconductor devices.
polishing  process applied to either reduce roughness of the wafer surface or to remove excess material from the surface; typically mechanical-chemical process using chemically reactive slurry.
slicing  term refers to the process of cutting of the single-crystal semiconductor into wafers; high precision diamond blades are used.
Bridgman growth  A method used to grow single-crystal semiconductors typically III-V, e.g. GaAs; uses multi-zone furnace in which Ga and As are contained in the ampule and in contact with GaAs seed; the GaAs melt is passed from higher to lower temperature zone; conceptually similar to float-zone (FZ) crystal growth method.
LEC  Liquid Encapsulated Czochralski growth.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.