Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
CMOS  Complementary Metal Oxide Semiconductor structure; consists of N-channel and P-channel MOS transistors; due to very low power consumption and dissipation as well minimization of the current in "off" state CMOS is a very effective device configuration for implementation of digital functions; CMOS is a key device in state-of-the-art silicon microelectronics.
CMOS inverter  a pair of two complementary transistors (a p-channel and an n-channel) with the source of the n-channel transistor connected to the drain of the p-channel one and the gates connected to each other. The output (drain of the p-channel transistor) is high whenever the input (gate) is low and the other way round. CMOS inverter is the basic building block of CMOS digital circuits.
MOSFET  Metal-Oxide-Semiconductor Field Effect Transistor; FET with MOS structure as a gate; current flows in the channel between source and drain; channel is created by applying adequate potential to the gate contact and inverting semiconductor surface underneath the gate; MOSFET structure is implemented almost uniquely with Si and SiO2 gate oxide; efficient switching device which dominates logic and memory applications; PMOSFET (p-channel, n-type Si substrate) and NMOSFET (n-channel,p-type Si substrate) combined form basic CMOS cell.
NMOSFET  Metal-Oxide-Semiconductor Field Effect Transistor with n-type channel, i.e. device in which electrons are responsible for conduction in the channel; built into p-type substrate with n++ doped source and drain.
PMOSFET  metal-oxide-semiconductor field effect transistor with p-type channel, i.e. device built into n-type substrate with p++ doped source and drain; holes are responsible for conduction in the channel; in spite of inferior to NMOSFET performance needed in CMOS technology where it forms with an MOSFET a complimentary pair.
Term (Index) Definition
bulk CMOS  CMOS circuitry implemented on a standard bulk Si wafer rather than in a thin layer of active Si on insulator (SOI substrate).
wafer  thin (thickness depends on wafer diameter, but is less than 1 mm), circular slice of single-crystal semiconductor material used in manufacturing of semiconductor devices and integrated circuits; depending on material wafer diameter may range from about 25 mm to 300 mm; cut from the ingot of single crystal semiconductor.
Term (Index) Definition
CMOS inverter  a pair of two complementary transistors (a p-channel and an n-channel) with the source of the n-channel transistor connected to the drain of the p-channel one and the gates connected to each other. The output (drain of the p-channel transistor) is high whenever the input (gate) is low and the other way round. CMOS inverter is the basic building block of CMOS digital circuits.
CMOS  Complementary Metal Oxide Semiconductor structure; consists of N-channel and P-channel MOS transistors; due to very low power consumption and dissipation as well minimization of the current in "off" state CMOS is a very effective device configuration for implementation of digital functions; CMOS is a key device in state-of-the-art silicon microelectronics.
Term (Index) Definition
planar CMOS  standard CMOS cell featuring horizontal channels induced in the near-surface region of the substrate; as opposed to non-planar CMOS cells with channels built on the surface of the substrate such as in, for instance, FinFETs.
FinFET  innovative design of an MOSFET; typically built on SOI substrate on which silicon is etched into "fin"-like shaped body of the transistor; the gate is wrapped around and over the "fin" which also acts as a transistor's channel.

Reference: SemiOneSource,Notes, SN-4
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