Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
BST  (BaSr)TiO3, barium strontium titanate, dielectric featuring high k (in the range 160-600) at thicknesses exceeding about 40 nm; displays ferroelectric properties; used in storage capacitors, can be deposited by the variety of methods including misted deposition (LSMCD), MOCVD and sputtering.
mist deposition  deposition technique in which liquid precursor is delivered to the substrate in the form of a very fine mist (submicron droplets); in semiconductor manufacturing used to deposit very thin photoresist films and dielectrics; very useful in those applications in which spin-on process cannot be used, e.g. depositions on very large and/or heavy substrates.

Reference: Primaxx, Inc.
MOCVD  Metal-Organic Chemical Vapor Deposition; CVD process which uses metal-organic compounds as source materials; metal-organics thermally decompose at temperatures lower than other metal containing compounds; method often used in epitaxial growth of very thin films of III-V semiconductors.
sputtering, sputter deposition  bombardment of solid (target) by high energy chemically inert ions (e.g. Ar+)extracted from plasma; causes ejection of atoms from the target which are then re-deposited on the surface of the substrate purposely located in the vicinity of the target; common method of Physical Vapor Deposition (PVD) of metals and oxides.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.