Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
Auger electron  electron ejected from the solid as a result of two-stage ionization of atoms bombarded with high energy ions (Auger process); Auger electron carries energy specific to the atom from which it was ejected.
Auger Electron Spectroscopy, AES  surface characterization and depth profiling method based on the determination of the energy of Auger electrons ejected from the solid surface bombarded with high energy ions; only elements with atomic number > 2 can be detected.
Term (Index) Definition
Auger Electron Spectroscopy, AES  surface characterization and depth profiling method based on the determination of the energy of Auger electrons ejected from the solid surface bombarded with high energy ions; only elements with atomic number > 2 can be detected.
depth profiling  materials characterization method allowing determination of distribution of elements in the solid in the direction normal to its surface; common in conjunction with SIMS, Auger electron spectroscopy and other methods of surface analysis; profiling is accomplished by simultaneous gradual removal of material using ion milling and analysis of its chemical composition; d.p. is broadly used in semiconductor R&D.
Auger Electron Spectroscopy, AES  surface characterization and depth profiling method based on the determination of the energy of Auger electrons ejected from the solid surface bombarded with high energy ions; only elements with atomic number > 2 can be detected.
surface analysis  process aimed at the determination of chemical composition and/or structure of solid surfaces.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.