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Term (Index) Definition
APM  Ammonia hydroxide-hydrogen Peroxide-water Mixture; typically 0.25:1:5; same as SC1 and RCA-1; cleaning solution used primarily to remove particles from the surface; also capable of removing surface organics; strong solutions can etch/roughen silicon surface; forms chemical oxide (hydrophylic surface)on Si surface; applied at temperature between 40 oC and 70 oC; typically combined with megasonic agitation.
ammonium hydroxide, NH4OH  liquid obtained by dissolving ammonia in water; key ingredient of APM cleaning solution.
hydrogen peroxide, H2O2  liquid; very strong oxidizer; commonly used in cleaning solutions.
megasonic agitation, megasonic scrubbing  used to enhance particle removal from wafer surface by sonic pressure; megasonic energy at the frequency in 500-1000 kHz range is applied to the liquid (typically APM cleaning solution) in which wafers are immersed; more effective and less potentially damaging to the wafer (reduced cavitation) than ultrasonic agitation; standard feature in the immersion cleaning tools.

Reference: Akrion, Inc.
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