Semiconductor OneSource: Semiconductor Glossary

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A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
A

a , lattice constant	AAS	abrupt junction,
absorption	absorption coefficient	acceptor
access time	accumulation	activation energy
active Si layer	ADC	adhesion
adhesion promoter	adsorption	aerosol cleaning,
AFM	afterglow plasma	AII-BVI, II-VI, semiconductors
AIII-BV, III-V, semiconductors	AIV-BIV, IV-IV, semiconductors	ALCVD
AlGaAs	aligner	alignment
alignment mark	alloyed junction	alternative dielectrics
aluminum oxide, alumina, Al2O3	aluminum, conductor, Al	aluminum, contaminant, Al
ambipolar carrier transport	ambipolar semiconductor	AMLCD
ammonia, NH3	ammonium hydroxide, NH4OH	AMOLED
amorphous material	amorphous Si, a-Si	amphoteric dopant
analog device	analog integrated circuit	angstrom, Å
anhydrous HF, AHF	anisotropic etch	anneal
anodic oxidation	anodization	antimony, Sb
anti-reflective coating, ARC ®	antisite defect	APM
ArF excimer laser	argon, Ar	Arhenius plot
arsenic, As	arsine, AsH3	ashing
ASIC	assembly	ATE
Atmospheric Pressure CVD, APCVD	Atomic Layer Deposition, ALD	Atomic Layer Epitaxy, ALE
atomic number	Auger electron	Auger Electron Spectroscopy, AES
Auger recombination,	autodoping	avalanche breakdown
avalanche multiplication	avalanche photodetector,

back contact	Back End Of Line processes, BEOL	ballistic transport
ballroom cleanroom	band offset	band-edge lineup,
bandgap	bandgap engineering	BARITT
barrel reactor	barrier height	barrier metal
base	base punchthrough	base punch-through
base pushout	base transport factor	base width
basic oxidation,	batch process	batch reactor
BBUL packaging	BCCD	beam
BGA	BHF	bias-temperature stress
biaxial strain,	BiCMOS	binary semiconductor
bipolar device	bipolar transistor, BJT	bird beak
bit	BITS	blank
BNDC	boat	Body-Centered Cubic, (BCC) cell
Boltzmann constant, k	Boltzmann statistics ,	Boltzmann transport equation
bonded SOI	boron	boron penetration
bottom antireflective coating, BARC	bottom-up processing	boundary layer
BOX	BPSG	breakdown
breakdown field	breakdown voltage	breakdown, hard
breakdown, soft	Bridgman growth	Brillouin zone
BRT	brush scrubbing	BST
BTS	buffer layer	buffered oxide etch, BEO
bulk CMOS	bulk recombination,	buried oxide, BOX
burn-in

cadmium sulfide, CdS,	cadmium telluride, CdTe,	CAIBE
calcium, Ca	cantilever loading	capacitance-voltage, C-V, measurements
capping layer	capture cross-section	CAR
carbon devices ,	Carbon Doped Oxide, CDO,	carbon nanotube
Caro clean	carrier extraction	carrier generation
carrier injection	CBE	CD
CDI	CDO	CEL
ceramic package	CERDIP	CFM
chain scission	channel	channel length
channel stop	channeling	Charge Coupled Device, CCD
charge-to-breakdown, Qbd	chemical etching	chemical oxide
chemisorption	chip	chrome mask
CIGS	CIGS,	CIM
class cleanroom	cleaning	cleanroom
cleaved SOI	cluster	cluster, linear,
cluster, radial'	CMOS	CMOS inverter
CMP	CNFET,	CNT
cobalt silicide, CoSi2	coldwall reactor	collector
colloidal semiconductor,	common base configuration	common base current gain
common base cut-off frequency	common emitter configuration	common emitter current gain
common emitter cut-off frequency	compensated semiconductor	compound semiconductor
computational lithography,	concentrated photovoltaics, CPV,	conduction band
conductivity	conformal coating	constant - current stress, CCS
constant voltage stress, CVS	constant-source diffusion	contact angle, wetting angle
contact printing	contaminant	contamination
contamination control	continuity equation	Contrast Enhanced Layer, CEL
conversion efficiency,	COP	copper interconnect
copper, Cu	cost of ownership, COO	covalent bond
CP-4 etch	CPGA	CPU, microprocessor
Cr, chrome	critical dimension, CD	crosslinking
cross-talk	CRT	cryogenic aerosol
cryogenic pump	cryosol spray	crystal
crystal defects	crystal originated pits	crystal pulling
cubic system	current crowding	current gain
current-voltage, I-V, measurements	custom integrated circuit	cut-off frequency
CVD, Chemical Vapor Deposition	Czochralski crystal growth, CZ	CZTS,

DAC	damascene	dangling bond
DARC ®	DBR	DCFL
DDE	Deal - Grove model	Debye length
dechanneling,	deep depletion	deep level
deep UV, DUV	degenerate semiconductor	deionized water, DI water
delta doping,	density of states function	density of states,
denuded zone, DZ	depletion	depletion mode MOSFET
depth of focus, DOF	depth profiling	design rules
DESIRE	desorption	developer
development	DFT	DHBT
DHBT	DHF	DHFET
diamond	diamond lattice	DIBL
diborane, B2H6	dicing	die
die attachment	die separation	dielectric
dielectric relaxation time	diffusant	diffused junction
diffusion	diffusion coefficient, D	diffusion current
diffusion length	diffusion pump	diffusion source
digital device, digital integrated circuit	DIMOS	diode
DIP	direct bandgap semiconductor	direct plasma
direct recombination	direct tunneling	discrete device
dislocation	dispersive medium	DLP®,
DLT	DLTS	DMOS, D-MOS
donor	dopant	dopant activation
dopant de-activation	dopant redistribution	dopants of Silicon
doping	dose	double (dual) gate
double patterning	Double-Gate Transistor	downstream plasma
DPSSL	DQN photoresist	drain
drain engineering	drain extension	DRAM
DRIE	drift current	drift mobility
drift velocity	drive in	dry cleaning
dry etching	dry oxidation	dry oxide
dry pump	drying	DST, Depleted Substrate Transistor
DSW	DTMOSFET	dual damascene
DUV resist

Early effect	Ebd	EBDW
Ebers - Moll model	EBIC	EBL column,
ECL	ECR	ECR plasma
edge dislocation,	Edge Emitting Light Emitting Diode, EELED	EEL
EELS	EEPROM	effective mass
EFG,	Eg	Einstein relationship
elastic collision,	electromigration	electron
electron affinity	electron beam (e-beam) evaporation	electron beam (e-beam) heating
electron beam (e-beam) lithography, EBL	electron beam (e-beam) resist	electron beam, e-beam
electron effective mass,	electron gas, 2-dimensional	electron gun
electron mobility	Electron Projection Lithography, EPL	electron spin, spin
electron-hole pair	electronic device	electronic grade poly Si
electro-optic effect,	electroplating	elemental semiconductor
elementary charge, q	elevated drain	elevated drain
elevated source	ellipsometry	ELO
emitter	emitter injection efficiency factor	emitter push effect
endpoint	endpoint detection	energy gap, forbidden band, bandgap, Eg
enhancement mode MOSFET	enhancement techniques	EOT, equivalent oxide thickness
epitaxial lateral overgrowth, ELO	epitaxial layer	epitaxy
epitaxy by CVD	EPR	EPROM
ESCA	ESL	ESR (El. Spin Res.)
ESR (Eq. Ser. Res.)	EST	ET SOI,
etch anisotropy	etch mask	etch selectivity
etch stop	etching, etch	EUV, extreme UV
EUVL	evaporation	excess carriers
excimer laser	exciton	excitonic cells,
exposure	external, extrinsic gettering	extrinsic semiconductor
extrusion coating

Fabry - Perot cavity	Face-Centered Cubic, FCC, cell	faceting
FAMOS	FD SOI,	FDFinFET,
FDMOSFET	Fermi energy,	Fermi level
Fermi level pinning, FLP,	Fermi potential	Fermi-Dirac distribution function
ferroelectric crystal	ferromagnetic semiconductors,	FIB
Fick's law, Fick	field effect	Field Effect Transistor, FET
field oxide, FOX	filament evaporation	fill factor
FinFET	First 45 nm transistor	fixed charge
fixed charge	Fixed Shape Beam, FSB	flash memory
flat-band voltage, VFB	flip chip technology	flip-chip bonding
float-zone crystal growth, FZ	fluorescence,	fluorinated oxide
fluorine in SiO2	fluorine, F2	fluorine, F2, excimer laser
forbidden gap	forming gas	forward bias
FOUP	Fourier - Transform Infrared Spectroscopy, FTIR	four-point probe
Fowler - Nordheim tunneling, F-N	FRAM	free carrier
Frenkel defect	Frenkel pair	Front End Of Line processes, FEOL
FSB	FSG	FTPL
full field	full-field camera	full-field exposure
fully depleted SOI, FD SOI	furnace	furnace horizontal
furnace vertical	FUSI	FWI

g - line lithography	GAA,	GaAs-on-Si
gadolinia,	gadolinum oxide, Gd2O3,	gallium antimonide, GaSb
gallium arsenide, GaAs	gallium based semiconductors	gallium nitride, GaN
gallium phosphide, GaP	gas-phase mass transfer	gate
gate capacitance	gate contact	gate depletion,
gate dielectric	gate injection	gate length
gate oxidation,	gate oxide	gate self-aligned process
gate stack	GC - MS, gas chromatography	GCA,
generation	generation current	generation lifetime
generation-recombination current	germanide, germanides	germanium, Ge
gettering	gettering extrinsic	gettering intrinsic
GILD	global strain,	glow discharge
GOI	GOI or GeOI	gown
gowning	graded junction	grain
grain boundary	graphene,	Gummel-Poon model
Gunn diode, TED	Gunn effect

hafnium oxide, HfO2	hafnium silicate, HfSiO4	halbleiter
Hall effect	Hall voltage,	halo implantation,
handotai	hard bake	hard breakdown
HB LED,	HBT	HDIS'
HDP, High Density Plasma	HDP-CVD	heavily charged ion, HCI
HEED	helicon plasma	HEMT
Henry law	HEPA filter	heteroepitaxy
hetero-integration,	heterojunction	HEXFET
hexode etcher	HFET	HFL, HF-last
HIGFET	high angle implantation	high current implantor
high-frequency C-V	high-k dielectric	high-pressure Hg lamp
HIPOX	HK+MG	HKMG
HMDS	hole	hole mobility
homoepitaxy	homojunction	homopolar bond
hopping	horizontal furnace	hot carrier diode,
hot electron	hot plate	hotwall reactor
HPLP,	HPM	HREM
HRTEM	HSQ	HVAC
hybrid clean	hybrid IC	hybrid-pi model
hydrochloric acid, HCl	hydrofluoric acid, HF	hydrogen peroxide, H2O2
hydrogen reduction	hydrogen termination	hydrogenated a-Si
hydrophilic surface	hydrophobic surface

i - line lithography	I/O, IO	I2L
IBD	ICP	ICP MS
ideal MOS	ideality factor	IGBT
IGFET	ILD, Inter-Layer Dielectric	imaging resist
IMD	IMEC clean	immersion cleaning
immersion lithography	immersion lithography 193i,	impact ionization
IMPATT diode	implantation damage	implantation dose
implantation energy	implanter	in situ doping
in situ monitoring	indirect bandgap semiconductor	indirect recombination
indium (In) based semiconductors	inductive heating	inelastic collision,
infrared detector	ingot	inkjet printing
InP, indium phosphide	InSb, indium antimonide	insulator
integrated bipolar transistor	integrated circuit, IC	integrated device
integrated processing	interconnect	interconnect density,
interface trap	internal emission	interstitial
interstitial diffusion	intrinsic Fermi level	intrinsic gettering
intrinsic semiconductor	inversion	ion
ion beam	ion beam lithography, IBL	ion implantation
ion milling	ion multicharged, MCI	Ion Projection Lithography, IPL
ion reflection	ion single charge	ion sputtering, milling
ionic bond	ionic conduction	ionization
ionization energy	IPA drying	IPL
IR	iron, Fe	Irvin's curves
isolation	isopropyl alcohol, IPA	isotropic etch
ITO

JBS	JFET	junction
junction depth	junction, p-n

k	Kaufman source	killer defect
Kirk effect	KOH	KrF excimer laser

lamp cleaning	lamp heating	Langmuir-Blodgett film,
LASCR	laser heating	laser interferometry
LASER, laser	latch up, latchup, latch-up	lateral diffusion
lateral etching	lateral transistor	LATID
lattice	lattice constant , a	lattice matched structure
lattice mismatch	LCC	LCD
LDD	LDMOS	LDMOSFET
leadframe	leak	leak detector
leakage current	LEC	LED, Light Emitting Diode
LEED	LER	LET,
lifetime,	liftoff, lift-off, process	light emmiter
lighting, semiconductor lighting,	lightly doped drain, LDD	limited-source diffusion
line defect	Liquid Physical Depostion, LPD	lithography
lithography, computational.	lithography, dry,	LOCOS
logic circuit	long-range order	LOP
low energy implantation	low pressure oxidation	low-high, l-h, junction
low-k dielectric	low-pressure mercury (Hg) lamp	LPCVD
LPD	LPE	LSMCD
LSTP	LTE	LTO

magnetic CZ, MCZ	magnetic semiconductor,	magnetically confined plasma
magnetron	magnetron sputtering	majority carriers
Marangoni drying	mask	mask, photolithography
mask, X-ray lithography	masked lithography	maskless lithography,
mass action law,	mass flow controller, MFC	mass spectroscopy
Maxwell-Boltzmann distribution	MCP,	MCZ
mean free path	mechanical mask	megasonic agitation, megasonic scrubbing
megasonic cleaning	memory structure, cell	MEMS
MEMS release	mercury probe,	MERIE
MESA	MESC port	MESFET
metal	metal MOS gate	metallic bond
metallic contaminant	metallization	metallurgical junction
metallurgical junction	metal-semiconductor contact	MFMISFET
micrometer, micron	microprocessor	microwave plasma, MW plasma
mil	Miller capacitance,	Miller indices
MIM	MIMIC, MMIC	minienvironment
minority carriers	MIS	MISFET
mist deposition	MNOS	mobile charge
mobility	MOCVD	MODFET,
modulation doping,	MOEMS	Molecular Beam Epitaxy, MBE
molecular bond	molelectronics	molybdenum silicide, MoSi2
monolithic IC	Moore's law	MOS gate,
MOS, Metal Oxide Semiconductor	MOSFET	MOSFET scaling,
MOST	MPGA	MPS
MRAM,	MTBF	MTL
MuGFET. Multi-gate FET	Multichip Module, MCM	multicrystalline material
multilayer metallization	multilayer resist	multilevel interconnect, MLI
multilevel metallization	multiple patterning

n, refractive index	NAA	nanocrystal quantum dot, NQD,
nanodot	nanoglass	nanoheteroepitaxy, NHE
nanometer, nm	nano-ordered semiconductors,	nanoporous silica
nanotechnology	nanotechnology, conventional	nanotechnology, new generation
nanotube	nanowire	native oxide
NBTI,	negative charge dielectric	negative resist
negative resistance	NEMS	NGL
NGL, Next Generation Lithography	nickel silicide, NiSi	nitric oxide, NO
nitridation	nitrided oxide	nitrogen, N2
nitrous oxide, N2O	NMOSFET	NO, N2O oxidation
non-contact electrical characterization	non-radiative recombination	non-selective etching
non-volatile memory	normally "off" MOSFET	normally "on" MOSFET
NTD	n-type semiconductor	nucleation
numerical aperture, NA

OBIC	OEM	OFET
ohmic contact	OLED	omega gate,
OMVPE	ONO	opaque material
OPC,	Open-circuit voltage	OPL
optical emission spectroscopy, OES	optical interconnects	optical lithography
organic contaminant	organic LED, OLED	organic semiconductor
organic solvent	organic TFT, OTFT	OSC
OSF	OSQB	outdiffusion
overetchig	overlay	oxidation constants
oxidation kinetics	oxidation mask	oxide
oxide breakdown	oxide etching	oxide fixed charge, Qf
oxide mobile charge, Qm	oxide trapped charge	oxygen in silicon
ozonated water	ozone

package	packaging	PAL
parallel plate reactor	Partially- Depleted SOI, PDSOI	particle
particle counter	particle removal	passivation
passive element,	pattern definition	pattern generation, generator
Pauli exclusion principle	PCM,	PCRAM
PDIP	PDP	PEEM
Penn State University, University Park Campus,	pentacene	percolation
permittivity of vacuum	phase shift mask, PSM	phase shifter,
PHEMT	pHEMT	phonon
phophorescence,	phosphine, PH3	phosphorus tetrachloride, POCl3
phosphorus, P	phosphosilicate glass, PSG	photocurrent
photocurrent	Photo-CVD	photodetector
photodiode	photoelectric effect	photoemulsion
photoemulsion mask	photolithography, optical lithography	photomask
photon	photonic device	photoresist
photoresistor	photostabilization of resist	phototransistor
photovoltaic effect,	photovoltaics,	physical etching
Physical Liquid Deposition. PLD	Physical Vapor Deposition, PVD	physisorption
pi gate,	PIC,	piezoresistivity,
Pin Grid Array, PGA	p-i-n junction, PIN	pinhole
pionics,	Piranha clean	pitch
planar CMOS	planar defect	planar process
planar transistor	planarization	planarizing resist
Planck constant, h	plane channeling,	plasma
plasma anodization	plasma ashing	Plasma Enhanced Chemical Vapor Deposition, PECVD
plasma etching	Plasma Immersion Ion Implantation, PIII	plastic ICs
platinum silicide, PtSi	PLCC	PLD'
PLED	plug	PMMA
PMOLED	PMOSFET	p-n junction
p-n junction isolation	POA	POCL
point defect	Poisson equation	polar semiconductor
POLED	polishing	polprzewodnik
poly - Si gate	poly depletion	polycrystalline material, poly
polycrystalline silicon, poly Si	Poole - Frenkel conduction	Poole-Frenkel emission
POR,	porous dielectric	positive charge dielectric
positive resist	post-CMOS	post-CMP cleaning
post-implant anneal	potential barrier	POU
power - delay product	power device	ppb
ppm	PRE	pre-damage implants
predeposition	preferential etching	pressure units
PREVEIL	primitive cell,	process diagnostics
process monitoring	progressive breakdown	projected range
projection printing	PROM	protocrystalline material'
proximity effect	proximity printing	pseudomorphic material
p-type semiconductor	puller	Pulsed Laser Deposition, PLD,
PUT	PV	PVD
PZT

Qbd	QD LED,	QFP,
quad package,	quantum device	quantum dot
quantum efficiency	quantum well	quartz
quasi-Fermi level	quasistatic C-V

radial p-n junction,	radiant heating	radiation wavelength - energy conversion
radiative recombination	Radio Frequency, RF, plasma	raised source-drain
RAM	ramp voltage oxide breakdown, Ebd	Rapid Thermal Processing, RTP
raster scan	Rayleigh equation,	RBS
RCA	RCA-1, RCA1, RCA 1	RCA-2, RCA2, RCA 2
reactive evaporation	Reactive Ion Etching, RIE	reactive sputtering
recombination	recombination center,	recombination current
recombination lifetime	recombination site	rectifying contact
redistribution	refractive index, n	regioregular polythiophene
release process	remote plasma, downstream plasma	resist
resist ashing	resist stripping	resistivity
resolution	resonant tunneling	RET
RET,	reticle	retrograde gate
retrograde well	reverse bias	reverse breakdown voltage,
RF	RGA	RHEED
RIBE	rinsing	R-metal MOS gate
RMOS	R-MOSFET	RMS
roll-off	roll-to-roll process, R2R,	ROM
Roots pump	rotagoni drying	rough, roughing, pump
roughness	RTA	RTC
RTCVD	RTN	RTO
RTP	RTS

SACVD	SALICIDE process	SAM (Auger)
SAM (Monolayer)	SAMOS	sapphire
saturation current	SC-1, SC1, SC 1	SC-2, SC2, SC 2
scaling rules	SCALPEL	Scanning Electron Microscopy, SEM
Scanning Tunneling Microscopy, STM	scattering	sccm
SCE	Schottky barrier	Schottky clamped transistor
Schottky defect	Schottky diode	Schottky effect
Schottky emission	Schrodinger equation	SCR
screw dislocation,	scrub, scrubbing	SCS
SDHT	Secco etch	seed crystal
SEG	segregation coefficient, m	SEL , Surface - Emitting Laser
Selective Area Chemical Vapor Deposition, SACVD	selective epitaxy	selective etching
selective exposure	SELED , Surface- Emitting LED	semiconducteur
semiconductor	semiconductor device	semiconductor diode
semiconductor laser	semiconductore	semi-insulating semiconductor
series resistance	shadow mask	shadowing effect
shallow junction	shallow trench isolation, STI	sheet resistance
Shockley - Read - Hall theory	short-channel effect, SCE,	short-circuit current
silane, SiH4	SILC	silicidation
silicide, silicides	silicon carbide, SiC	silicon dioxide, SiO2
silicon dopants	silicon etch	silicon germanium, SiGe
silicon nanowire, SiNW	silicon nitride, Si3N4	silicon oxidation
silicon oxynitride	silicon precursor	silicon tetrachloride, SiCl4
silicon, Si	silicon-silicon dioxide, Si-SiO2, system	SiLK
SIMOX,	SIMS	single charge ion
single-chip module	single-crystal, single-crystal material	single-wafer cleaning
single-wafer process	SiNW	SIP
SiP,	SIPOS	Sirtl etch
slicing	slurry	small-signal
Smart Cut ™	SMIF	SMIF box, SMIF pod
SMOLED	SOAN	SOC
SOD	sodium, Na	soft bake
soft breakdown	soft lithography,	SOI, Silicon-on-Insulator
solar cell	Solid State Light Source, SSLS,	solid-phase crystallization, SPC
solid-phase epitaxy, SPE,	solid-solubility limit	SOM
sonic wave	SONOS,	SOS, Silicon-On-Sapphire
source	source-drain engineering	space charge region
spacer	SPC	spectroscopic ellipsometry, SE
SPICE	spiking	spin cleaning
spin drying	spin-on deposition, spin coating	spin-on glass, SOG
spintronics	SPM	spontaneous emission
spray cleaning	spray deposition	spreading resistance
spreading resistance profiling	sputter yield	sputtering target
sputtering, sputter deposition	sputtering, sputter etching	SRAM
SRD	SRH	SRO
SSI	sSOI,	stacking fault
Staebler - Wronski effect	static charge	steam oxidation
step and repeat projection	stepper	STI
stimulated emission	STM	STO
storage capacitor	storage time	straggle
strain, biaxial,	strain, uniaxial,	strained - layer quantum-well device
strained film	strained layer supperlattice, SLS	strained silicon
stress	stressor	stripping
strong inversion	sub-collector contact	suboxide
substitutional	substitutional diffusion	substrate injection
subthreshold region	supercritical cleaning	supercritical CO2 , SCCO2
supercritical fluid	superlattice	SUPREM
surface amorphization	surface analysis	surface charge
surface charge analysis	surface cleaning	surface conditioning
surface damage	surface dopant concentration	Surface Emitting Laser, SEL
Surface Emitting Light Emitting Diode, SELED	surface mount technology, SMT	surface orientation
surface passivation	Surface Photovoltage, SPV	surface potential
surface recombination	surface recombination velocity	surface roughness
surface state	surround gate	SWAMI
SWCNT,	SWI	SWP
synchrotron radiation

TAB	TaN	tantalum carbide, TaC,
tantalum pentoxide, Ta2O5	tantalum silicide, TaSi2	tantalum, Ta
target	TCA	TCE
TCO	TDDB	TD-GC-MS
TED	TED(iffusion)	TED(iode)
TEM	TEOS	TeraHertz Transistor
ternary semiconductor	TFET, Tunnel FET,	TFT, Thin Film Transistor
thermal budget	thermal conductivity	thermal evaporation
thermal oxidation, thermal oxide	thermionic emission	thin film
three-demensional (3-D) integrated circuits	threshold adjustment	threshold voltage,VT
through silicon via, TSV,	thyristor	Time-Dependent Dielectric Breakdown, TDDB
Time-Zero Dielectric Breakdown, TZDB	titanium nitride, TiN	titanium oxide, TiO3
titanium silicide, TiSi2	titanium sublimation pump	titanium, Ti
TOF-SIMS, TOFSIMS	top-down processing	Total Reflection X-Ray Fluorescence spectroscopy, TXRF
transconductance	transient enhanced diffusion, TED	transistor
transistor leakage	Transit-Time Diodes	transverse straggle
trap,	TRAPATT diode	trench
trench capacitor	trench isolation	trivalent silicon
TSV,	TTF	TTL
tungsten silicide, WSi2	tungsten, W	tunnel oxide
tunneling, tunneling current	TUNNET	turbomolecular pump
TXRF

UHV	UHV CVD	UJT
ULPA filter	ULSI	ultrasonic agitation, ultrasonic scrubbing
ultra-thin oxide	Ultra-Thin Silicon on Sapphire, UTSOS	U-MOSFET, UMOS
undercut	uniaxial strain,	unipolar device
unipolar transistor	unlimited source diffusion	unsaturated bond
UPS	USJ	UTB SOI,
UV cleaning	UV, ultraviolet	UV/Cl2
UV/ozone

vacancy	vacancy	vacuum level,
vacuum pump,	valence band	Van der Pauw method
van der Waals force	varactor	variable shape beam
varistor	VCSEL	VDMOSFET
vector scan	velocity overshoot	velocity saturation
vertical channel	vertical diffusion	vertical furnace
vertical transistor	VeSFET	VeSTICS
Vfb roll-ff	VHSIC	via
via first,	via last,	via veil
VLS growth	VLSI	V-MOSFEF, VMOS
volatile memory	volume defect	VPD
VPD - AAS	VUV

wafer	wafer bonding	wafer charging
wafer diameter	wafer fabrication	wafer flat
wafer reclaiming,	Wafer Scale Integration, WSI	wafer track
wafer warpage	wafer-level packaging,	Weibull plot
well	wet bench	wet cleaning
wet etching	wet oxidation	wetting angle
WF	wide bandgap semiconductor	wire bonding
work function	work function difference	WSI
WSP,	Wurtzite structure

XPS	X-ray diffraction	X-ray Fluoroescence, XRF
X-ray lithography	X-ray mask	X-ray resist

yield

yield ramping

Zener diode	Zener effect	Zener tunneling
Zerbst plot	zeta potential	zinc blend lattice
zinc oxide, ZnO	Zinc sulfide, ZnS	zirconium silicate, ZrSiO4
zirconuim oxide, zirconia, ZrO2	Z-RAM

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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

Review and Order

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Created and operated by J. Ruzyllo. Copyright � J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.