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Semiconductor Glossary book, click here to see new prices!
With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.
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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.
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A
a , lattice constant | AAS | abrupt junction, | absorption | absorption coefficient | acceptor | access time | accumulation | activation energy | active Si layer | ADC | adhesion | adhesion promoter | adsorption | aerosol cleaning, | AFM | afterglow plasma | AII-BVI, II-VI, semiconductors | AIII-BV, III-V, semiconductors | AIV-BIV, IV-IV, semiconductors | ALCVD | AlGaAs | aligner | alignment | alignment mark | alloyed junction | alternative dielectrics | aluminum oxide, alumina, Al2O3 | aluminum, conductor, Al | aluminum, contaminant, Al | ambipolar carrier transport | ambipolar semiconductor | AMLCD | ammonia, NH3 | ammonium hydroxide, NH4OH | AMOLED | amorphous material | amorphous Si, a-Si | amphoteric dopant | analog device | analog integrated circuit | angstrom, Å | anhydrous HF, AHF | anisotropic etch | anneal | anodic oxidation | anodization | antimony, Sb | anti-reflective coating, ARC ® | antisite defect | APM | ArF excimer laser | argon, Ar | Arhenius plot | arsenic, As | arsine, AsH3 | ashing | ASIC | assembly | ATE | Atmospheric Pressure CVD, APCVD | Atomic Layer Deposition, ALD | Atomic Layer Epitaxy, ALE | atomic number | Auger electron | Auger Electron Spectroscopy, AES | Auger recombination, | autodoping | avalanche breakdown | avalanche multiplication | avalanche photodetector, |
B
back contact | Back End Of Line processes, BEOL | ballistic transport | ballroom cleanroom | band offset | band-edge lineup, | bandgap | bandgap engineering | BARITT | barrel reactor | barrier height | barrier metal | base | base punchthrough | base punch-through | base pushout | base transport factor | base width | basic oxidation, | batch process | batch reactor | BBUL packaging | BCCD | beam | BGA | BHF | bias-temperature stress | biaxial strain, | BiCMOS | binary semiconductor | bipolar device | bipolar transistor, BJT | bird beak | bit | BITS | blank | BNDC | boat | Body-Centered Cubic, (BCC) cell | Boltzmann constant, k | Boltzmann statistics , | Boltzmann transport equation | bonded SOI | boron | boron penetration | bottom antireflective coating, BARC | bottom-up processing | boundary layer | BOX | BPSG | breakdown | breakdown field | breakdown voltage | breakdown, hard | breakdown, soft | Bridgman growth | Brillouin zone | BRT | brush scrubbing | BST | BTS | buffer layer | buffered oxide etch, BEO | bulk CMOS | bulk recombination, | buried oxide, BOX | burn-in |
C
cadmium sulfide, CdS, | cadmium telluride, CdTe, | CAIBE | calcium, Ca | cantilever loading | capacitance-voltage, C-V, measurements | capping layer | capture cross-section | CAR | carbon devices , | Carbon Doped Oxide, CDO, | carbon nanotube | Caro clean | carrier extraction | carrier generation | carrier injection | CBE | CD | CDI | CDO | CEL | ceramic package | CERDIP | CFM | chain scission | channel | channel length | channel stop | channeling | Charge Coupled Device, CCD | charge-to-breakdown, Qbd | chemical etching | chemical oxide | chemisorption | chip | chrome mask | CIGS | CIGS, | CIM | class cleanroom | cleaning | cleanroom | cleaved SOI | cluster | cluster, linear, | cluster, radial' | CMOS | CMOS inverter | CMP | CNFET, | CNT | cobalt silicide, CoSi2 | coldwall reactor | collector | colloidal semiconductor, | common base configuration | common base current gain | common base cut-off frequency | common emitter configuration | common emitter current gain | common emitter cut-off frequency | compensated semiconductor | compound semiconductor | computational lithography, | concentrated photovoltaics, CPV, | conduction band | conductivity | conformal coating | constant - current stress, CCS | constant voltage stress, CVS | constant-source diffusion | contact angle, wetting angle | contact printing | contaminant | contamination | contamination control | continuity equation | Contrast Enhanced Layer, CEL | conversion efficiency, | COP | copper interconnect | copper, Cu | cost of ownership, COO | covalent bond | CP-4 etch | CPGA | CPU, microprocessor | Cr, chrome | critical dimension, CD | crosslinking | cross-talk | CRT | cryogenic aerosol | cryogenic pump | cryosol spray | crystal | crystal defects | crystal originated pits | crystal pulling | cubic system | current crowding | current gain | current-voltage, I-V, measurements | custom integrated circuit | cut-off frequency | CVD, Chemical Vapor Deposition | Czochralski crystal growth, CZ | CZTS, |
D
DAC | damascene | dangling bond | DARC ® | DBR | DCFL | DDE | Deal - Grove model | Debye length | dechanneling, | deep depletion | deep level | deep UV, DUV | degenerate semiconductor | deionized water, DI water | delta doping, | density of states function | density of states, | denuded zone, DZ | depletion | depletion mode MOSFET | depth of focus, DOF | depth profiling | design rules | DESIRE | desorption | developer | development | DFT | DHBT | DHBT | DHF | DHFET | diamond | diamond lattice | DIBL | diborane, B2H6 | dicing | die | die attachment | die separation | dielectric | dielectric relaxation time | diffusant | diffused junction | diffusion | diffusion coefficient, D | diffusion current | diffusion length | diffusion pump | diffusion source | digital device, digital integrated circuit | DIMOS | diode | DIP | direct bandgap semiconductor | direct plasma | direct recombination | direct tunneling | discrete device | dislocation | dispersive medium | DLP®, | DLT | DLTS | DMOS, D-MOS | donor | dopant | dopant activation | dopant de-activation | dopant redistribution | dopants of Silicon | doping | dose | double (dual) gate | double patterning | Double-Gate Transistor | downstream plasma | DPSSL | DQN photoresist | drain | drain engineering | drain extension | DRAM | DRIE | drift current | drift mobility | drift velocity | drive in | dry cleaning | dry etching | dry oxidation | dry oxide | dry pump | drying | DST, Depleted Substrate Transistor | DSW | DTMOSFET | dual damascene | DUV resist |
E
Early effect | Ebd | EBDW | Ebers - Moll model | EBIC | EBL column, | ECL | ECR | ECR plasma | edge dislocation, | Edge Emitting Light Emitting Diode, EELED | EEL | EELS | EEPROM | effective mass | EFG, | Eg | Einstein relationship | elastic collision, | electromigration | electron | electron affinity | electron beam (e-beam) evaporation | electron beam (e-beam) heating | electron beam (e-beam) lithography, EBL | electron beam (e-beam) resist | electron beam, e-beam | electron effective mass, | electron gas, 2-dimensional | electron gun | electron mobility | Electron Projection Lithography, EPL | electron spin, spin | electron-hole pair | electronic device | electronic grade poly Si | electro-optic effect, | electroplating | elemental semiconductor | elementary charge, q | elevated drain | elevated drain | elevated source | ellipsometry | ELO | emitter | emitter injection efficiency factor | emitter push effect | endpoint | endpoint detection | energy gap, forbidden band, bandgap, Eg | enhancement mode MOSFET | enhancement techniques | EOT, equivalent oxide thickness | epitaxial lateral overgrowth, ELO | epitaxial layer | epitaxy | epitaxy by CVD | EPR | EPROM | ESCA | ESL | ESR (El. Spin Res.) | ESR (Eq. Ser. Res.) | EST | ET SOI, | etch anisotropy | etch mask | etch selectivity | etch stop | etching, etch | EUV, extreme UV | EUVL | evaporation | excess carriers | excimer laser | exciton | excitonic cells, | exposure | external, extrinsic gettering | extrinsic semiconductor | extrusion coating |
F
Fabry - Perot cavity | Face-Centered Cubic, FCC, cell | faceting | FAMOS | FD SOI, | FDFinFET, | FDMOSFET | Fermi energy, | Fermi level | Fermi level pinning, FLP, | Fermi potential | Fermi-Dirac distribution function | ferroelectric crystal | ferromagnetic semiconductors, | FIB | Fick's law, Fick | field effect | Field Effect Transistor, FET | field oxide, FOX | filament evaporation | fill factor | FinFET | First 45 nm transistor | fixed charge | fixed charge | Fixed Shape Beam, FSB | flash memory | flat-band voltage, VFB | flip chip technology | flip-chip bonding | float-zone crystal growth, FZ | fluorescence, | fluorinated oxide | fluorine in SiO2 | fluorine, F2 | fluorine, F2, excimer laser | forbidden gap | forming gas | forward bias | FOUP | Fourier - Transform Infrared Spectroscopy, FTIR | four-point probe | Fowler - Nordheim tunneling, F-N | FRAM | free carrier | Frenkel defect | Frenkel pair | Front End Of Line processes, FEOL | FSB | FSG | FTPL | full field | full-field camera | full-field exposure | fully depleted SOI, FD SOI | furnace | furnace horizontal | furnace vertical | FUSI | FWI |
G
g - line lithography | GAA, | GaAs-on-Si | gadolinia, | gadolinum oxide, Gd2O3, | gallium antimonide, GaSb | gallium arsenide, GaAs | gallium based semiconductors | gallium nitride, GaN | gallium phosphide, GaP | gas-phase mass transfer | gate | gate capacitance | gate contact | gate depletion, | gate dielectric | gate injection | gate length | gate oxidation, | gate oxide | gate self-aligned process | gate stack | GC - MS, gas chromatography | GCA, | generation | generation current | generation lifetime | generation-recombination current | germanide, germanides | germanium, Ge | gettering | gettering extrinsic | gettering intrinsic | GILD | global strain, | glow discharge | GOI | GOI or GeOI | gown | gowning | graded junction | grain | grain boundary | graphene, | Gummel-Poon model | Gunn diode, TED | Gunn effect |
H
hafnium oxide, HfO2 | hafnium silicate, HfSiO4 | halbleiter | Hall effect | Hall voltage, | halo implantation, | handotai | hard bake | hard breakdown | HB LED, | HBT | HDIS' | HDP, High Density Plasma | HDP-CVD | heavily charged ion, HCI | HEED | helicon plasma | HEMT | Henry law | HEPA filter | heteroepitaxy | hetero-integration, | heterojunction | HEXFET | hexode etcher | HFET | HFL, HF-last | HIGFET | high angle implantation | high current implantor | high-frequency C-V | high-k dielectric | high-pressure Hg lamp | HIPOX | HK+MG | HKMG | HMDS | hole | hole mobility | homoepitaxy | homojunction | homopolar bond | hopping | horizontal furnace | hot carrier diode, | hot electron | hot plate | hotwall reactor | HPLP, | HPM | HREM | HRTEM | HSQ | HVAC | hybrid clean | hybrid IC | hybrid-pi model | hydrochloric acid, HCl | hydrofluoric acid, HF | hydrogen peroxide, H2O2 | hydrogen reduction | hydrogen termination | hydrogenated a-Si | hydrophilic surface | hydrophobic surface |
I
i - line lithography | I/O, IO | I2L | IBD | ICP | ICP MS | ideal MOS | ideality factor | IGBT | IGFET | ILD, Inter-Layer Dielectric | imaging resist | IMD | IMEC clean | immersion cleaning | immersion lithography | immersion lithography 193i, | impact ionization | IMPATT diode | implantation damage | implantation dose | implantation energy | implanter | in situ doping | in situ monitoring | indirect bandgap semiconductor | indirect recombination | indium (In) based semiconductors | inductive heating | inelastic collision, | infrared detector | ingot | inkjet printing | InP, indium phosphide | InSb, indium antimonide | insulator | integrated bipolar transistor | integrated circuit, IC | integrated device | integrated processing | interconnect | interconnect density, | interface trap | internal emission | interstitial | interstitial diffusion | intrinsic Fermi level | intrinsic gettering | intrinsic semiconductor | inversion | ion | ion beam | ion beam lithography, IBL | ion implantation | ion milling | ion multicharged, MCI | Ion Projection Lithography, IPL | ion reflection | ion single charge | ion sputtering, milling | ionic bond | ionic conduction | ionization | ionization energy | IPA drying | IPL | IR | iron, Fe | Irvin's curves | isolation | isopropyl alcohol, IPA | isotropic etch | ITO |
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lamp cleaning | lamp heating | Langmuir-Blodgett film, | LASCR | laser heating | laser interferometry | LASER, laser | latch up, latchup, latch-up | lateral diffusion | lateral etching | lateral transistor | LATID | lattice | lattice constant , a | lattice matched structure | lattice mismatch | LCC | LCD | LDD | LDMOS | LDMOSFET | leadframe | leak | leak detector | leakage current | LEC | LED, Light Emitting Diode | LEED | LER | LET, | lifetime, | liftoff, lift-off, process | light emmiter | lighting, semiconductor lighting, | lightly doped drain, LDD | limited-source diffusion | line defect | Liquid Physical Depostion, LPD | lithography | lithography, computational. | lithography, dry, | LOCOS | logic circuit | long-range order | LOP | low energy implantation | low pressure oxidation | low-high, l-h, junction | low-k dielectric | low-pressure mercury (Hg) lamp | LPCVD | LPD | LPE | LSMCD | LSTP | LTE | LTO |
M
magnetic CZ, MCZ | magnetic semiconductor, | magnetically confined plasma | magnetron | magnetron sputtering | majority carriers | Marangoni drying | mask | mask, photolithography | mask, X-ray lithography | masked lithography | maskless lithography, | mass action law, | mass flow controller, MFC | mass spectroscopy | Maxwell-Boltzmann distribution | MCP, | MCZ | mean free path | mechanical mask | megasonic agitation, megasonic scrubbing | megasonic cleaning | memory structure, cell | MEMS | MEMS release | mercury probe, | MERIE | MESA | MESC port | MESFET | metal | metal MOS gate | metallic bond | metallic contaminant | metallization | metallurgical junction | metallurgical junction | metal-semiconductor contact | MFMISFET | micrometer, micron | microprocessor | microwave plasma, MW plasma | mil | Miller capacitance, | Miller indices | MIM | MIMIC, MMIC | minienvironment | minority carriers | MIS | MISFET | mist deposition | MNOS | mobile charge | mobility | MOCVD | MODFET, | modulation doping, | MOEMS | Molecular Beam Epitaxy, MBE | molecular bond | molelectronics | molybdenum silicide, MoSi2 | monolithic IC | Moore's law | MOS gate, | MOS, Metal Oxide Semiconductor | MOSFET | MOSFET scaling, | MOST | MPGA | MPS | MRAM, | MTBF | MTL | MuGFET. Multi-gate FET | Multichip Module, MCM | multicrystalline material | multilayer metallization | multilayer resist | multilevel interconnect, MLI | multilevel metallization | multiple patterning |
N
n, refractive index | NAA | nanocrystal quantum dot, NQD, | nanodot | nanoglass | nanoheteroepitaxy, NHE | nanometer, nm | nano-ordered semiconductors, | nanoporous silica | nanotechnology | nanotechnology, conventional | nanotechnology, new generation | nanotube | nanowire | native oxide | NBTI, | negative charge dielectric | negative resist | negative resistance | NEMS | NGL | NGL, Next Generation Lithography | nickel silicide, NiSi | nitric oxide, NO | nitridation | nitrided oxide | nitrogen, N2 | nitrous oxide, N2O | NMOSFET | NO, N2O oxidation | non-contact electrical characterization | non-radiative recombination | non-selective etching | non-volatile memory | normally "off" MOSFET | normally "on" MOSFET | NTD | n-type semiconductor | nucleation | numerical aperture, NA |
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P
package | packaging | PAL | parallel plate reactor | Partially- Depleted SOI, PDSOI | particle | particle counter | particle removal | passivation | passive element, | pattern definition | pattern generation, generator | Pauli exclusion principle | PCM, | PCRAM | PDIP | PDP | PEEM | Penn State University, University Park Campus, | pentacene | percolation | permittivity of vacuum | phase shift mask, PSM | phase shifter, | PHEMT | pHEMT | phonon | phophorescence, | phosphine, PH3 | phosphorus tetrachloride, POCl3 | phosphorus, P | phosphosilicate glass, PSG | photocurrent | photocurrent | Photo-CVD | photodetector | photodiode | photoelectric effect | photoemulsion | photoemulsion mask | photolithography, optical lithography | photomask | photon | photonic device | photoresist | photoresistor | photostabilization of resist | phototransistor | photovoltaic effect, | photovoltaics, | physical etching | Physical Liquid Deposition. PLD | Physical Vapor Deposition, PVD | physisorption | pi gate, | PIC, | piezoresistivity, | Pin Grid Array, PGA | p-i-n junction, PIN | pinhole | pionics, | Piranha clean | pitch | planar CMOS | planar defect | planar process | planar transistor | planarization | planarizing resist | Planck constant, h | plane channeling, | plasma | plasma anodization | plasma ashing | Plasma Enhanced Chemical Vapor Deposition, PECVD | plasma etching | Plasma Immersion Ion Implantation, PIII | plastic ICs | platinum silicide, PtSi | PLCC | PLD' | PLED | plug | PMMA | PMOLED | PMOSFET | p-n junction | p-n junction isolation | POA | POCL | point defect | Poisson equation | polar semiconductor | POLED | polishing | polprzewodnik | poly - Si gate | poly depletion | polycrystalline material, poly | polycrystalline silicon, poly Si | Poole - Frenkel conduction | Poole-Frenkel emission | POR, | porous dielectric | positive charge dielectric | positive resist | post-CMOS | post-CMP cleaning | post-implant anneal | potential barrier | POU | power - delay product | power device | ppb | ppm | PRE | pre-damage implants | predeposition | preferential etching | pressure units | PREVEIL | primitive cell, | process diagnostics | process monitoring | progressive breakdown | projected range | projection printing | PROM | protocrystalline material' | proximity effect | proximity printing | pseudomorphic material | p-type semiconductor | puller | Pulsed Laser Deposition, PLD, | PUT | PV | PVD | PZT |
Q
R
radial p-n junction, | radiant heating | radiation wavelength - energy conversion | radiative recombination | Radio Frequency, RF, plasma | raised source-drain | RAM | ramp voltage oxide breakdown, Ebd | Rapid Thermal Processing, RTP | raster scan | Rayleigh equation, | RBS | RCA | RCA-1, RCA1, RCA 1 | RCA-2, RCA2, RCA 2 | reactive evaporation | Reactive Ion Etching, RIE | reactive sputtering | recombination | recombination center, | recombination current | recombination lifetime | recombination site | rectifying contact | redistribution | refractive index, n | regioregular polythiophene | release process | remote plasma, downstream plasma | resist | resist ashing | resist stripping | resistivity | resolution | resonant tunneling | RET | RET, | reticle | retrograde gate | retrograde well | reverse bias | reverse breakdown voltage, | RF | RGA | RHEED | RIBE | rinsing | R-metal MOS gate | RMOS | R-MOSFET | RMS | roll-off | roll-to-roll process, R2R, | ROM | Roots pump | rotagoni drying | rough, roughing, pump | roughness | RTA | RTC | RTCVD | RTN | RTO | RTP | RTS |
S
SACVD | SALICIDE process | SAM (Auger) | SAM (Monolayer) | SAMOS | sapphire | saturation current | SC-1, SC1, SC 1 | SC-2, SC2, SC 2 | scaling rules | SCALPEL | Scanning Electron Microscopy, SEM | Scanning Tunneling Microscopy, STM | scattering | sccm | SCE | Schottky barrier | Schottky clamped transistor | Schottky defect | Schottky diode | Schottky effect | Schottky emission | Schrodinger equation | SCR | screw dislocation, | scrub, scrubbing | SCS | SDHT | Secco etch | seed crystal | SEG | segregation coefficient, m | SEL , Surface - Emitting Laser | Selective Area Chemical Vapor Deposition, SACVD | selective epitaxy | selective etching | selective exposure | SELED , Surface- Emitting LED | semiconducteur | semiconductor | semiconductor device | semiconductor diode | semiconductor laser | semiconductore | semi-insulating semiconductor | series resistance | shadow mask | shadowing effect | shallow junction | shallow trench isolation, STI | sheet resistance | Shockley - Read - Hall theory | short-channel effect, SCE, | short-circuit current | silane, SiH4 | SILC | silicidation | silicide, silicides | silicon carbide, SiC | silicon dioxide, SiO2 | silicon dopants | silicon etch | silicon germanium, SiGe | silicon nanowire, SiNW | silicon nitride, Si3N4 | silicon oxidation | silicon oxynitride | silicon precursor | silicon tetrachloride, SiCl4 | silicon, Si | silicon-silicon dioxide, Si-SiO2, system | SiLK | SIMOX, | SIMS | single charge ion | single-chip module | single-crystal, single-crystal material | single-wafer cleaning | single-wafer process | SiNW | SIP | SiP, | SIPOS | Sirtl etch | slicing | slurry | small-signal | Smart Cut ™ | SMIF | SMIF box, SMIF pod | SMOLED | SOAN | SOC | SOD | sodium, Na | soft bake | soft breakdown | soft lithography, | SOI, Silicon-on-Insulator | solar cell | Solid State Light Source, SSLS, | solid-phase crystallization, SPC | solid-phase epitaxy, SPE, | solid-solubility limit | SOM | sonic wave | SONOS, | SOS, Silicon-On-Sapphire | source | source-drain engineering | space charge region | spacer | SPC | spectroscopic ellipsometry, SE | SPICE | spiking | spin cleaning | spin drying | spin-on deposition, spin coating | spin-on glass, SOG | spintronics | SPM | spontaneous emission | spray cleaning | spray deposition | spreading resistance | spreading resistance profiling | sputter yield | sputtering target | sputtering, sputter deposition | sputtering, sputter etching | SRAM | SRD | SRH | SRO | SSI | sSOI, | stacking fault | Staebler - Wronski effect | static charge | steam oxidation | step and repeat projection | stepper | STI | stimulated emission | STM | STO | storage capacitor | storage time | straggle | strain, biaxial, | strain, uniaxial, | strained - layer quantum-well device | strained film | strained layer supperlattice, SLS | strained silicon | stress | stressor | stripping | strong inversion | sub-collector contact | suboxide | substitutional | substitutional diffusion | substrate injection | subthreshold region | supercritical cleaning | supercritical CO2 , SCCO2 | supercritical fluid | superlattice | SUPREM | surface amorphization | surface analysis | surface charge | surface charge analysis | surface cleaning | surface conditioning | surface damage | surface dopant concentration | Surface Emitting Laser, SEL | Surface Emitting Light Emitting Diode, SELED | surface mount technology, SMT | surface orientation | surface passivation | Surface Photovoltage, SPV | surface potential | surface recombination | surface recombination velocity | surface roughness | surface state | surround gate | SWAMI | SWCNT, | SWI | SWP | synchrotron radiation |
T
TAB | TaN | tantalum carbide, TaC, | tantalum pentoxide, Ta2O5 | tantalum silicide, TaSi2 | tantalum, Ta | target | TCA | TCE | TCO | TDDB | TD-GC-MS | TED | TED(iffusion) | TED(iode) | TEM | TEOS | TeraHertz Transistor | ternary semiconductor | TFET, Tunnel FET, | TFT, Thin Film Transistor | thermal budget | thermal conductivity | thermal evaporation | thermal oxidation, thermal oxide | thermionic emission | thin film | three-demensional (3-D) integrated circuits | threshold adjustment | threshold voltage,VT | through silicon via, TSV, | thyristor | Time-Dependent Dielectric Breakdown, TDDB | Time-Zero Dielectric Breakdown, TZDB | titanium nitride, TiN | titanium oxide, TiO3 | titanium silicide, TiSi2 | titanium sublimation pump | titanium, Ti | TOF-SIMS, TOFSIMS | top-down processing | Total Reflection X-Ray Fluorescence spectroscopy, TXRF | transconductance | transient enhanced diffusion, TED | transistor | transistor leakage | Transit-Time Diodes | transverse straggle | trap, | TRAPATT diode | trench | trench capacitor | trench isolation | trivalent silicon | TSV, | TTF | TTL | tungsten silicide, WSi2 | tungsten, W | tunnel oxide | tunneling, tunneling current | TUNNET | turbomolecular pump | TXRF |
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.
This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.
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