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7.1. Basic Concepts
The etching is a subtractive process during which desired material is removed from the surface of the wafer. As shown in sections 7.2 and 7.3, etching can be implemented either in the liquid-phase (wet etching) or in the gas-phase (dry etching). Regardless of whether it is wet or dry, material etching can be accomplished by chemical reaction, physical interactions (e.g. ion bombardment), or combination of both. In either case the gole is typically an etch process which is selective and anisotropic.
This section is still under construction
References
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