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5.1. Epitaxial and Non-Epitaxial Deposition
In section 3.2.2. it was demonstrated how epitaxial layers, considered to be an "extension" of the wafer, are used to improve quality of substrates used in semiconductor fabrication and also to create new opportunities in terms device design. In this section key characteristics of epitaxial deposition are outlined.
The term "epitaxial deposition" applies ONLY to the thin-film deposition processes which grow single-crystal thin film on the single-crystal substrate in such way that the crystallographic structure of the film exactly reproduces crystallographic structure of the substrate. All other thin-film deposition processes are by definition non-epitaxial. In semiconductor fabrication the vast majority of thin film depositions steps do not involve epitaxial deposition.
Eptaxial deposition can be carried out by means of PVD (section 5.2.1) or CVD (section 5.2.2) methods.
Suggested search words: epitaxy, CVD epitaxy, MBE, molecular beam epitaxy.
References
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