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     1.  INTRODUCTION

     2.  KEY CONCEPTS

         2.1.  Semiconductor Materials

         2.2.  Semiconductor Devices

             2.2.1.  Planar devices

             2.2.2.  Non-Planar Devices

         2.3.  Semiconductor Fabrication Processes

         2.4.  Fabrication Schemes

         2.5.  Environment and Tools

             2.5.1.  Cleanroom

             2.5.2.  Vacuum equipment

             2.5.3.  Energy to stimulate processes

     3.  SUBSTRATES

         3.1.  Wafer Fabrication

         3.2.  Engineered Substrates

             3.2.1.  Gettering

             3.2.2.  Epitaxial extension

             3.2.3.  Wafer bonding

             3.2.4.  Silicon-on-Insulator, SOI

             3.2.5.  Strained layers

         3.3.  Substrates Other Than Semiconductor Wafers

     4.  SURFACE CLEANING

         4.1.  Contaminants

         4.2.  Wet cleaning

         4.3.  Dry cleaning

         4.4.  Supercritical fluid cleaning

         4.5.  Surface Conditioning

     5.  THIN FILM DEPOSITION

         5.1.  Epitaxial and Non-Epitaxial Deposition

         5.2.  Deposition Techniques

             5.2.1.  Physical Vapor Deposition, PVD

             5.2.2.  Chemical Vapor Deposition, CVD

                 5.2.2.1.  CVD methods

                 5.2.2.2.  Atomic Layer Deposition, ALD

             5.2.3.  Physical Liquid Deposition, PLD

             5.2.4.  Electroplating

         5.3.  Oxide Formation by Oxidation

             5.3.1.  Thermal oxidation of silicon

             5.3.2.  Other oxidation techniques

         5.4.  Thickness Measurements

     6.  PATTERN DEFINITION: LITHOGRAPHY

         6.1.  Lithographic Process

         6.2.  Optical Lithography (Photolithography)

             6.2.1.  Exposure techniques and tools

             6.2.2.  Photomasks

             6.2.3.  Photoresist

         6.3.  Non-Optical Lithographies

     7.  PATTERN DEFINITION: ETCHING

         7.1.  Basic Concepts

         7.2.  Wet Etching

         7.3.  Dry Etching

         7.4.  Post-Etching Processes

     8.  SELECTIVE DOPING

         8.1.   Dopants and Doping

         8.2.  Diffusion

             8.2.1.  Diffusion in solids

             8.2.2.  Doping by diffusion

         8.3.  Ion Implantation

             8.3.1.  Principles of ion implantation

             8.3.2.  Technology of ion implantation

         8.4.  Monitoring of Doping

     9.  CONTACTS AND INTERCONNECTS

         9.1.  Function and Required Properties

         9.2.  Materials

             9.2.1.  Metals

             9.2.2.  Polycrystalline silicon

             9.2.3.  Silicides

         9.3.  Multilevel Metallization

         9.4.  Inter-Level Dielectrics

         9.5.  Chemical-Mechanical Planarization

    10.  FROM PROCESSED WAFER TO PACKAGED DEVICE

        10.1.  On-Wafer Testing

        10.2.  Wafer Dicing

        10.3.  Chip Attachment and Interconnecting

        10.4.  Package Types and Packaging Process





































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