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Sunday, July 25, 2021

#474 Thirty years ago: July 1991

Not much new comparing to the main themes of the research papers published earlier in 1991.

Focus was still on HBTs (Heterojunction Bipolar Transistors), built on multilayer III-V semiconductors structures. Occasional ventures into silicon germanium (SiGe) territory, which was a novelty in practical applications at that time, are noted. Not surprisingly, with deposition of thin-film, single-crystal compounds at the core of HBT technology, experiments with Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD) were at the center of attention of semiconductor processing research community back then.


As far as MOSFET is concerned, in anticipation of the challenges of gate oxide scaling, experiments aimed at the mastering of ultra-thin SiO2 continued world-wide.

Posted by Jerzy Ruzyllo at 05:46 PM | Semiconductors | Link is a personal blog of Jerzy Ruzyllo. He is Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University. With over forty years' experience in academic research and teaching in semiconductor engineering he has a unique perspective on the developments in this technical domain and enjoys blogging about it.

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