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Sunday, May 30, 2021

#470 More on the role of MOS gate capacitance

A precondition for the properly working MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors), which rule digital IC technology regardless of technology node, is adequate capacitive coupling between gate contact and silicon. In other words, density of MOS gate capacitance needs to be sufficiently high to keep transistor work while it is being reduced in size to pack more transistors per unit area of the chip.

 

Seeing evolution of the MOSFET during the last 15 years through the prism of the density of MOS gate stack capacitance, the following three stages can be identified:  (i) replacing thinned to the limit SiO2 as a gate oxide with higher dielectric constant material to allow increased physical thickness of the gate dielectric, (ii) modifying transistor architecture and using “fin” configuration to increase gate area at the reduced transistor foot print, and (iii) employing nanoscaled silicon in the form of stacked-up nanosheets to address challenges facing next generations of MOSFET-based digital electronics.

 

Some more on the role of MOS gate capacitance in the blog posted on January 17, 2021

 

Posted by Jerzy Ruzyllo at 10:00 AM | Semiconductors | Link



Semi1source.com/blog is a personal blog of Jerzy Ruzyllo. He is Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University. With over forty years' experience in academic research and teaching in semiconductor engineering he has a unique perspective on the developments in this technical domain and enjoys blogging about it.




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