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Sunday, February 28, 2021

#462 Thirty years ago: February 1991

Two papers in February ’91 issue of IEEE Electron Letters that attracted my attention were concerned with very different topics. First was a paper by my Penn State colleagues describing successful realization of transistor action in the thin-film diamond Field-Effect Transistor. The other one demonstrated significantly increased hole mobility in strain-controlled Si-Ge Modulation-Doped FET. It was an early indication of the possibilities to improve device performance by employing strain in the crystal lattice induced by SiGe.


At the material/process end of semiconductor research spectrum Journal of the Electrochemical Society in its February ’91 issue reported on the Reactive Ion Etching of Indium-Tin Oxide (ITO) which since then became number one transparent conductor broadly used as a contact material in various photonic devices. Also, published in this issue paper concerned with the effect of oxygen concentration on lifetime in magnetic Czochralski (CZ) grown single-crystal silicon was a confirmation of advantageous role magnetic field is playing in the CZ processes.

Posted by Jerzy Ruzyllo at 07:49 PM | Semiconductors | Link is a personal blog of Jerzy Ruzyllo. He is Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University. With over forty years' experience in academic research and teaching in semiconductor engineering he has a unique perspective on the developments in this technical domain and enjoys blogging about it.

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