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Sunday, November 29, 2020

#453 Thirty years ago: November 1990

 The emphasis on the search of the new solutions in broadly understood transistor technology in early 90’s continues (see blog #443). Just as yet another example, in November ’90 issue of IEEE Electron Device Letters, 16 out of 22 papers published were devoted to transistors and transistors engineering. And not only one type of transistors. The list of transistors, referred to by acronyms, in this issue of EDL is long: HEMTs both as HFETs and MODFETs, MESFETs, MOSFETs of course, but also HBTs in various forms and shapes.

 

As far as processing is concerned, focus was on 0.25 µm technology (still technology node of the future at that time) as revealed by the papers published in November 1990 issue of the Journal of Electrochemical Society. For instance, new DUV photoresist compatible with KrF excimer lasers, low temperature thermal growth of ultra-thin SiO2 gate oxides (high-k gate dielectrics were of no interest yet), shallow doping, and quite a few papers on plasma etching underscore semiconductor processing interests 30 years ago. Earlier 1990 issues of JES were, not surprisingly, showing thesame trends (e.g. see blog $493). 

 

Posted by Jerzy Ruzyllo at 08:35 PM | Semiconductors | Link



Semi1source.com/blog is a personal blog of Jerzy Ruzyllo. He is Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University. With over forty years' experience in academic research and teaching in semiconductor engineering he has a unique perspective on the developments in this technical domain and enjoys blogging about it.




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