September 1990 was a month when my colleagues and collaborators did demonstrate Penn State’s leadership in exploration of the wide bandgap, carbon-based semiconductors. Papers on “High-Temperature Schottky Diodes with Thin-Film Diamond Base” by G. Gildenblat et al., published in September 1990 issue of the IEEE  Electron Device Letters,  and “Oxidation of Single-Crystal Silicon Carbide” by Z. Zheng, R.E. Tressler, and K.E. Spear published in the same month issue of  the Journal of The Electrochemical Society testify to this effect.

Other than that, out of eleven papers published in “Silicon Devices” section of the September 1990 issue of the IEEE Transactions on Electron Devices, six were devoted squarely to SOI MOSFET technology. Silicon-on-Insulator technology was getting significant attention thirty years ago. And rightly so…