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Sunday, August 16, 2020

#443 Thirty years ago: August 1990


Not surprisingly, six out of eight papers published in August 1990 issue of IEEE Electron Device Letters were devoted to research on innovative transistors solutions. Whether SOI MESFET, heterostructure FET, high performance BJT, or GaAS FETs, the urge to develop innovative transistor technologies able to meet anticipated future challenges was evident.


At the process side, as some papers published in the August ’90 issue of the Journal of the Electrochemical Society indicate, low-temperature, or rather low-thermal budget processing continued to be of interest. Also, papers devoted to plasma etching, including remote µwave plasma which was a technique attracting significant attention at that time, and RIE were noticed.


Posted by Jerzy Ruzyllo at 11:26 AM | Semiconductors | Link is a personal blog of Jerzy Ruzyllo. He is Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University. With over forty years' experience in academic research and teaching in semiconductor engineering he has a unique perspective on the developments in this technical domain and enjoys blogging about it.

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