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Sunday, July 26, 2020

#441 Thirty years ago: July 1990

As indicated in my previous “Thirty years ago” pieces, papers published in 1990 demonstrate “awakening” of semiconductor research community to the fact that the continuation of transistor scaling, basically undisturbed until then, is bound to face challenges moving well below 0.25 µm technology which was more or less a standard at that time.

 

Various papers in IEEE’s Transactions on Electron Devices and Electron Device Letters point to the anticipated problems with transistor’s drive current in the scaled down devices. The terms “hot-carrier degradation” or “DIBL” (drain-induced barrier lowering) were ubiquitous in the device-related research papers thirty years ago.

  

In terms of the mainstream silicon manufacturing technology lowering of the temperature of some notoriously high temperature processes was of interest. As an example, paper in the July ’90 issue of the Journal of the Electrochemical Society reported on the successfully implemented epitaxial growth of high-quality silicon at 850oC. Also, wet cleaning of deep trenches was getting attention because of growing at that time need to improve trench isolation technology.

Posted by Jerzy Ruzyllo at 11:20 AM | Semiconductors | Link



Semi1source.com/blog is a personal blog of Jerzy Ruzyllo. He is Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University. With over forty years' experience in academic research and teaching in semiconductor engineering he has a unique perspective on the developments in this technical domain and enjoys blogging about it.




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