Papers published in June 1990 in IEEE Transactions on Electron Devices and IEEE Electron Device Letters exemplify significant interest at that time in gallium arsenide (GaAs), and in GaAs-based heterostructures in the variety of transistor configurations (MESFETs, HBTs, HEMTs). At that time GaAs was seen as a possible replacement for silicon in some cutting-edge transistor applications which, as we know now, did not happen. At least to an extent anticipated back then.

What caught my attention among other papers, were the reports on polysilicon and amorphous TFTs (Thin-Film Transistors) which shows growing interest in coming to life at that time active matrix displays technology where TFTs play key role.