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Sunday, April 26, 2020

#429 Thirty years ago: April 1990

 As literature from exactly 30 years ago indicates, thirty years ago high-performance CMOS was getting into the territory of sub-quarter µm gate length (0.22 µm to be specific), and 3.5 nm gate oxide thickness. Literature further demonstrates (April issues of IEEE Transactions on Electron Devices and IEEE Electron Device Letters) strong focus on transistor technology in general. Weather it was field-effect MOSFET, MEST, MODFET, or bipolar HBT, the search for the innovative transistor solution for next generation digital circuitry was clearly on display.

 

Other than that, SOI technology, represented at that time by SIMOX substrates, was aggressively pursued. At the materials side, as papers in the April issue of the Journal of the Electrochemical Society indicate, the search for the gate dielectrics displaying higher k than SiO2 was gaining momentum. Except that it was focused on TiO2, Ta2O5, and zirconia (ZrO2) which later, as we now know, did not solve the problem high-k gate dielectric because of the insufficient thermal stability. 

Posted by Jerzy Ruzyllo at 03:18 PM | Semiconductors | Link



Semi1source.com/blog is a personal blog of Jerzy Ruzyllo. He is Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University. With over forty years' experience in academic research and teaching in semiconductor engineering he has a unique perspective on the developments in this technical domain and enjoys blogging about it.




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