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Sunday, February 23, 2020

#423 Thirty years ago: February 1990

Research papers published in February 1990 reflected on the anticipated at that time challenges facing semiconductor technology. In the case of the Journal of Electrochemical Society the issues related to the MOS gate oxide processing in the context of the continued scaling of its thickness are at the forefront. (Quick reminder, the gate oxide thickness was at that time in the range of 8-10 nm and the oxide was either pure or nitrided SiO2). Also of interest were challenges facing etch technology in the case of binary and ternary compound semiconductors material systems.

 

In the case of IEEE Electron Device Letters similar concerns are on full display, but at the device level. Hot-electron induced degradation in deep-submicrometer MOSFETs, as advanced MOSFETs were referred to at that time, was getting much attention.

 

The  February 1990 issue of the IEEE Transactions on Electron Devices was a special issue devoted enrtirely to Photovoltaic Materials, Devices, and Technologies. An observation: not much of what's going on in photovotaics now, was entirely unknown 30 years ago.

Posted by Jerzy Ruzyllo at 02:08 PM | Semiconductors | Link



Semi1source.com/blog is a personal blog of Jerzy Ruzyllo. He is Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University. With over forty years' experience in academic research and teaching in semiconductor engineering he has a unique perspective on the developments in this technical domain and enjoys blogging about it.



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