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Sunday, May 12, 2019

#404 Evolution of the MOSFET

As an "old timer", I follow evolution of the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) since it has began to be a go to transistor configuration. And it changed pretty drastically over the years.

 

The evolution is proceeding in three distinct areas: gate scaling, materials used, and transistor's architecture. Regarding gate scaling, situation is clear. Over the last 50 years gate length was reduced by three orders of magnitude, i.e. from 10 micrometer to 10 nanometer. And scaling below 10 nm is happening now. How low will it go below 5 nm, remains to be seen.

 

There are other ways to improve transistor performance. High electron mobility semiconductors used as channel materials are coming to the rescue. May be molybdenum sulfide, or graphene?

 

Finally, changes in the transistor architecture bring about improved transistor's performance without gate shortening. Transistor architecture goes vertical with FinFET being very likely just the first step. The problem is that all of the above may not be enough to assure long-term growth of computational electronics. That's why alternative to the electric charge based transistors are pursued...

Posted by Jerzy Ruzyllo at 10:40 AM | Semiconductors | Link



Semi1source.com/blog is the personal blog of Jerzy Ruzyllo. With over 35 years of experience in academic research and teaching in the area of semiconductor engineering (currently holding position of a Distinguished Professor of Electrical Engineering and Professor of Materials Science and Engineering at Penn State University), he has a unique perspective on the developments in this progress driving technical domain and enjoys blogging about it.



With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.






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