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Sunday, February 18, 2018

#384 Potential barrier at M-S contact

In reference to blog #382....


An alternative to p-n junction way of potential barrier formation is by bringing into contact semiconductor and metal featuring different work functions and to form the metal-semiconductor contact also known as Schottky contact (after German physicist Walter Schottky, 1886 -1976). In this case difference in work functions of materials in contact alters potential distribution across the junction which results in formation of a potential barrier. 


Similarly to p-n junction, a reverse bias voltage applied to the Schottky junction increases height of the potential barrier and prevents the flow of majority carriers from semiconductor to metal.  A forward bias, lowers the potential barrier at the contact  and allows large current to flow from semiconductor to metal. Similarly to  p-n junction, the result is a non-symmetrical, rectifying current-voltage characteristic making metal-semiconductor contact a diode known as Schottky diode.

Posted by Jerzy Ruzyllo at 03:38 PM | Semiconductors | Link is the personal blog of Jerzy Ruzyllo. With over 35 years of experience in academic research and teaching in the area of semiconductor engineering (currently holding position of a Distinguished Professor of Electrical Engineering and Professor of Materials Science and Engineering at Penn State University), he has a unique perspective on the developments in this progress driving technical domain and enjoys blogging about it.

With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

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