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Sunday, January 28, 2018

#382 Potential barrier

Following on the concept of potential barrier mentioned in previous blog.

 

The most obvious way to create a potential barrier in semiconductors is to bring to contact two semiconductors with different work functions.  Actually, these may be two pieces of the same material such as silicon, providing however, each of them is doped at the different level and/or feature different conductivity type (p-type semiconductor and n-type semiconductor), and thus, feature different work function.  A potential barrier is formed in the piece of semiconductor in the absence of the voltage bias when p-type and n-type semiconductors are brought into contact to form a structure known as a p-n junction.

 

Posted by Jerzy Ruzyllo at 08:52 PM | Semiconductors | Link



Semi1source.com/blog is the personal blog of Jerzy Ruzyllo. With over 35 years of experience in academic research and teaching in the area of semiconductor engineering (currently holding position of a Distinguished Professor of Electrical Engineering and Professor of Materials Science and Engineering at Penn State University), he has a unique perspective on the developments in this progress driving technical domain and enjoys blogging about it.



With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.






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