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Sunday, December 3, 2017

#379 The concept of "equivalent gate length" (EGL) is bound to come

The Equivalent Oxide Thickness (EOT) is a number (in nm) which expresses thickness of the SiO2 gate oxide that is needed to obtain the same capacitance of the MOS gate stack as the one obtained with physically thicker than SiO2, but featuring higher than SiO2 dielectric constant k.


Here, I suggest the term Equivalent Gate Length (EGL) as the represenation of the same as EOT idea, but used in relation to the MOSFETs gate scaling process.


It appears that scaling of the physical gate length in advanced CMOS ciruits below 5 nm  may be practical only under some special circumstances. Yet, the progress beyond 5 nm technology node will continue except that by means of vastly expanding pool of materials used to construct transistor and by drastically modifying its architecture rather than by gate scaling. When those times will come the term Equivalent Gate Length will be very handy. As an example, EGL = 1 nm would mean that the transistor performance equivalent to the performance of the ficticious transistor featuring gate length of 1 nm can be in some situations accomplished using MOSFETs with longer physical gate length such as for instance 7 nm.


Posted by Jerzy Ruzyllo at 02:15 PM | Semiconductors | Link is the personal blog of Jerzy Ruzyllo. With over 35 years of experience in academic research and teaching in the area of semiconductor engineering (currently holding position of a Distinguished Professor of Electrical Engineering and Professor of Materials Science and Engineering at Penn State University), he has a unique perspective on the developments in this progress driving technical domain and enjoys blogging about it.

With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

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