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Sunday, September 17, 2017

#373 Silicon carbide is now

While carbon may still be semiconductor of the future (see previous blog),  a compound of carbon with silicon (silicon carbide, SiC) is making big splashes in the mainstream semiconductor device technology.

 

 SiC, also known as carborundumm, is a semiconductor material which features wide energy gap and high thermal conductivity, high breakdown field. and high saturated electron drift velocity. This combination of characteristics offer superior performance of SiC devices in high temperature/high power applications, as well as in high speed operation under high electric field conditions.  All together this features make SiC device technology  a significant commercial success.

Posted by Jerzy Ruzyllo at 03:47 PM | Semiconductors | Comments (6) | Link


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Semi1source.com/blog is the personal blog of Jerzy Ruzyllo. With over 35 years of experience in academic research and teaching in the area of semiconductor engineering (currently holding position of a Distinguished Professor of Electrical Engineering and Professor of Materials Science and Engineering at Penn State University), he has a unique perspective on the developments in this progress driving technical domain and enjoys blogging about it.



With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.






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