back to S1S home

Sunday, February 5, 2017

#362 More on tin...

Continuing on the comments on tin from two weeks ago here is a short verison of what I already said in blog #306.


 First, simulation and early experiments indicate that by forming a germanium-tin alloy, GeSn, with 3% of Sn added to Ge, a semiconductor which converts indirect bandgap of Ge into direct bandgap and increases hole mobility of Ge is formed.


Second, a single layer of tin atoms called stanene (from stannum and graphene) should feature, according to theoretical physicists, outstanding electrical conductivity around room temperature potentially making it a great interconnect material in future generation ICs.

Posted by Jerzy Ruzyllo at 04:00 PM | Semiconductors | Link is the personal blog of Jerzy Ruzyllo. With over 35 years of experience in academic research and teaching in the area of semiconductor engineering (currently holding position of a Distinguished Professor of Electrical Engineering and Professor of Materials Science and Engineering at Penn State University), he has a unique perspective on the developments in this progress driving technical domain and enjoys blogging about it.

With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

‹‹ November 2017 ››
W Mo Tu We Th Fr Sa Su
44 1 2 3 4 5
45 6 7 8 9 10 11 12
46 13 14 15 16 17 18 19
47 20 21 22 23 24 25 26
48 27 28 29 30      

Copyright © 2017 J. Ruzyllo. All rights reserved.