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Sunday, November 27, 2016

#355 Near-surface region

Electronic properties in the near-surface region of any solid, including semiconductors, depart significantly from the same properties in the bulk.  The reason is two-fold. First, the near-surface region of a single crystal semiconductor is disturbed structurally because of the abrupt discontinuity of the crystal structure at the surface. Second, unsaturated broken bonds at the surface are electrically active and unless neutralized over time through interactions with an ambient these so-called dangling bonds  will feature electric charge promoting changes in the distribution of electric charge in the sub-surface region of semiconductor.

 

 

Both structural and electrical disturbances in the near-surface region alter key electronic properties of the material. For instance, due to the increased scattering of charge carriers resulting from the defective lattice and electrically charged centers, mobility of carriers µ moving close to the surface is reduced significantly as compared to the bulk. This effect has significant consequences in the operation of transistors used to create advanced CMOS-based integrated circuits.

Posted by Jerzy Ruzyllo at 05:27 PM | Semiconductors | Link



Semi1source.com/blog is the personal blog of Jerzy Ruzyllo. With over 35 years of experience in academic research and teaching in the area of semiconductor engineering (currently holding position of a Distinguished Professor of Electrical Engineering and Professor of Materials Science and Engineering at Penn State University), he has a unique perspective on the developments in this progress driving technical domain and enjoys blogging about it.



With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.






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