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Sunday, August 14, 2016

#350 Surface Photovoltage (SPV) based method

As mentioned in the previous enrty, Surface Photovoltage (SPV) based method allows characterization  of semiconductor surfaces without a need to process dedicate test devices.  


The SPV method represents non-contact methods of semiconductor surface characterization. It involves the absorption of photons featuring energy higher than semiconductor bandgap which penetrate sub-surface region of semiconductor wafer to the depth dependent on the wavelength of the light used for surface illumination. Resulting generation of electron-hole pairs alters surface photovoltage and allows, by means of Surface Charge Profiling (SCP) methodology  determination of the surface charge, near-surface dopant concentration, as well as surface recombination lifetime. See for instance a paper in which SCP was used to monitor deactivation of boron dopants in the very near-surface region of p-type silicon wafers.

Posted by Jerzy Ruzyllo at 05:31 PM | Semiconductors | Link is the personal blog of Jerzy Ruzyllo. With over 35 years of experience in academic research and teaching in the area of semiconductor engineering (currently holding position of a Distinguished Professor of Electrical Engineering and Professor of Materials Science and Engineering at Penn State University), he has a unique perspective on the developments in this progress driving technical domain and enjoys blogging about it.

With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

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