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Sunday, July 24, 2016

#349 Electrical characterization of semiconductor surfaces

As mentioned in the previous blog methods of electrical characterization provide particularly relevant information regarding chemical/physical condition of semiconductor surfaces.


The methods of electrical characterization of semiconductor surface and near-surface region fall into two categories. The first is based on the use of test devices with permanent contacts (e.g. MOS capacitors or metal-semiconductor diodes) allowing I-V and C-V measurements from which key electronic properties of semiconductor surface can be obtained. Second category involves characterization methods which do not require permanent contact to the surface, and hence, allow measurements of selected electrical parameters of the as-processed surfaces, i.e. surfaces resulting from any given operation without wafer exposure to any additional processing steps.  Methods based on  non-contact Surface Photovoltage (SPV) and temporary contact based Photoconductance Decay (PCD) measurements fall into this category.



Posted by Jerzy Ruzyllo at 09:31 PM | Semiconductors | Link is the personal blog of Jerzy Ruzyllo. With over 35 years of experience in academic research and teaching in the area of semiconductor engineering (currently holding position of a Distinguished Professor of Electrical Engineering and Professor of Materials Science and Engineering at Penn State University), he has a unique perspective on the developments in this progress driving technical domain and enjoys blogging about it.

With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

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