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Sunday, June 7, 2015

#327 Electron transport in graphene

Starting with blogs # 30 and #34 from some 7.5 years ago (yes, time is flying!), I devoted several entries to this “marvel material”. This time, in the spirit of the last three blogs, it is about the electron transport in graphene.The topic is hot as in theory electron mobility in graphene can be as high as some 200,000 cm2V-1s-1 (for comparison, electron mobility in bulk silicon is a mere 1,500  cm2V-1s-1 at room temperature).

 

 

The problem is that such high electron mobility is possible only in the free-standing or otherwise somehow suspended graphene. As soon as graphene comes in contact with other materials (e.g. SiC or metals on the surfaces of which it is formed) the electrons  moving in graphene are subject to a severe scattering and their mobility drops by amost two orders of magnitude.

 

 

It is abvious that  the making of the working, mass-manufactured transistors using a free-standing or suspended one-atom thick sheet of carbon is going to create truly major manufacturability related  challenges. It will be interesting to follow a progress in this regard. A usefulness of graphene in transistor applications will depend on it

 

Posted by Jerzy Ruzyllo at 05:28 PM | Semiconductors | Link



Semi1source.com/blog is the personal blog of Jerzy Ruzyllo. With over 35 years of experience in academic research and teaching in the area of semiconductor engineering (currently holding position of a Distinguished Professor of Electrical Engineering and Professor of Materials Science and Engineering at Penn State University), he has a unique perspective on the developments in this progress driving technical domain and enjoys blogging about it.



With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.






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