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Sunday, April 19, 2015

#324 Surface defects and carrier scattering

As  pointed out in the previous blog (#323), defect scattering is a main reason for the much reduced charge carrier mobility at the surface of a crystalline semiconductor  as compared to its bulk. Among crystal defects, wchich include point defects, line defects, planar defects and volume defects, the point defects are primarily responsiblefor this effect.

 

 

Point defects are the highly localized imperfections of a crystalline structure which affect the periodicity of the crystal mostly in, or around, one unit cell. Whether it is a missing atom (vacancy) or or interstitially located additional atom, the effect on the moving carriers will be pronounced. What is making the surface particularly effective in disrupting the flow of charge carriers is the fact that it represents an abrupt  discontinuity of the lattice with broken interatomic bonds (“dangling” bonds) and missing atoms all of which act as the scattering centers.

 

Posted by Jerzy Ruzyllo at 08:32 AM | Semiconductors | Link



Semi1source.com/blog is the personal blog of Jerzy Ruzyllo. With over 35 years of experience in academic research and teaching in the area of semiconductor engineering (currently holding position of a Distinguished Professor of Electrical Engineering and Professor of Materials Science and Engineering at Penn State University), he has a unique perspective on the developments in this progress driving technical domain and enjoys blogging about it.



With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.






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