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Saturday, August 21, 2010

Interesting times

Did you notice that it is no longer that the progress in semiconductor technology is driven almost solely by the technical breakthroughs needed to sustain growth of digital ICs? And that the Moore’s law applies only to the portion of what’s hot and new in semiconductor technology?

 
Organics, nano-ordered semiconductor structures (wires, dots), carbon based structural wonders (graphene in particular, but also tubes), photovoltaics, MEMS/NEMS etc., each in its own way contributes to the progress of semiconductor science and engineering these days. 
 
These are interesting times for semiconductor buffs, indeed.
 

P.S. Granted, some of the above are pursued to sustain growth of digital electronics, but there is so much going on beyond this….

Posted by Jerzy Ruzyllo at 08:23 PM | Semiconductors | Comments (1) | Link


Friday, August 13, 2010

Is there enough gallium?

As a component of GaAs and GaN (as well as AlGaAs, InGaN, etc.), gallium is an element of great importance in both electronic and photonic semiconductor device engineering. Its use will grow even faster once technology of single-crystal bulk GaN  will be worked out to the point where adequetely sized substrates will be available at the reasonable cost.

 

Gallium abundance in the Earth's crust is less than 20 ppm. So, it is hardly a common element. Is there enough of it to meet future needs of semiconductor industry? Particularly if along with GaAs and GaP, GaN substrate wafers will become readily available? May be we should stick to epi layer Ga-V technology?

 

These are genuine questions, by the way. I am just wondering...

Posted by Jerzy Ruzyllo at 07:38 AM | Semiconductors | Comments (0) | Link


Monday, July 26, 2010

Nanotechnology - "hard" and "soft"

 The term “nanotechnology” has become a highly recognizable, but, outside of the scientific community, rarely fully understood symbol of everything that is ultimate in science and technology. What adds to the apparent identity problem is that the term “nanotechnology” means, and rightly so, different things to the scientists representing different scientific domains.

 

Among various ways of looking at “nanotechnology” the one which I use for the purpose of explaining the fundamentals distinguishes between “hard nanotechnology” and “soft nanotechnology”. The former is obviously concerned with physics, materials, material systems engineering and is used in reference to advance technical endeavors such as high-end integrated circuits (32 nm technology generation for instance), 2D material systems (e.g , quantum wells), 1D (e.g., nanowires); and zeroD (e.g.; quantum dots). The latter is concerned primarily with biology, molecular biology, medicine, life sciences in general. Both manipulate the matter at the atomic and molecular level, but for the different purpose (quite often using the same tools, though).

 

Obviously, an ultimate goal is an integration  of  "hard" and "soft" components, as defined above, into bio-electro-mechanical nanosystems.

 

Yes, it is a simplistic interpretation of the phenomenon known as "nanotechnology", but my experience is that at the very fundamental level it seems to be working very well. At least it sorts things out, somewhat.

Posted by Jerzy Ruzyllo at 09:43 AM | Semiconductors | Comments (1) | Link


Thursday, July 15, 2010

Cheap, highest quality substrate?

Where do you go when you need just a substrate? You don't care about its chemical composition, or crystallographic structure, electrical conductivity, etc. You just need a thin, very clean, temperature resistant, chemically resistant, mechanically sturdy piece of material featuring very smooth surface. And you need, let's say, 150 cm2 of it, or may be even 500 cm2, and you don’t want to spend thousands of $$ to get it. And, in addition, you want it to be compatible with a standard photolithographic pattern definition tools.

 
The answer is silicon. Yes, only silicon wafers meet all those requirements. No glass, no quartz, sapphire, any ceramics, metal, other semiconductor wafers…. Yes, only silicon. And you can make into an insulating substrate by easily growing thermal oxide.
 
I realized all of the above when looking for the low surface roughness, temperature resistant, thin piece of a solid to run some thin-film deposition studies in my group. What it is chemically did not matter. To my surprise silicon turned out to be the only solution. Long live silicon!

Posted by Jerzy Ruzyllo at 08:02 PM | Semiconductors | Comments (0) | Link


Sunday, June 20, 2010

Nano-ordered semiconductors

Without too much of the fanfare the terminology used to identify various classes of semiconductors is gradually evolving as the semiconductor landscape is changing.  In terms of crystallographic structure for instance, terms "ordered" and "disordered" semiconductors are often being used instead of the more traditional terms "crystalline" and "non-crystalline" (amorphous) semiconductors. As the latter refer to the three-dimensional arrangements of atoms and to the corresponding geometry of physical interatomic bonds in the material, they do not adequately reflect the nature of organic semiconductors, for instance.

My experience shows that in order to cover the entire semiconductor field these days it is helpful to add a sub-class of "nano-ordered" semiconductors to the above "ordered-disordered" scheme.  The term is used in reference to the self-contained, crystallographically ordered semiconductor material systems which due to the extremely confined geometry (at least in one dimension less than about 5 nm - I agree, this number is rather arbitrary, but you are getting the idea...) feature different physical properties than their bulk counterparts. Obviously, we are talking  here nanowires, nanotubes, quantum dots, graphene, etc.

Posted by Jerzy Ruzyllo at 07:37 PM | Semiconductors | Comments (2) | Link


Monday, June 14, 2010

Gadolinia story

As I have indicated in the previous post, after deciding on hafnia (HfO2) during the first stage of exploration (1st generation high-k gate dielectrics represented by transition metal oxides) the search for yet better performing gate dielectrics for MOSFETs continues. Among the rare earth metal oxides, which represent 2nd generation high-k gate dielectrics, gadolinium oxide,Gd2O3, also known as  gadolinia, attracts more attention than other oxides in this class.
 
In terms of basic properties, gadolinia adequately meets requirements of an MOS gate dielectric, i.e. it displays k-value in the range 10-16, energy gap of 5.4 eV, a high conduction band offset with silicon, low leakage current, and a relatively high dielectric strength. What distinguishes gadolinium oxide among rare earth metal oxides is a set of other properties which in combination make it particularly promising as a gets dielectric on silicon.
 
Specifically, the cubic Gd2O3 has very close lattice-match to silicon; its lattice mismatch with Si(100) surface is within 0.5%. Hence, a cube-on-cube epitaxy between a Gd2O3 (100)-oriented crystal and the Si(100) surface, assuring very low interface state density is feasible. Furthermore, Gd2O3 is thermodynamically stable in contact with silicon at temperature exceeding 800 °C which means that formation of an interfacial oxide SiOx between Si and is Gd2O3 , which ruins EOT in the case of less thermally stable oxides on Si, can be prevented. As a result, in spite of the relatively modest dielectric constant, a Gd2O3 film thick enough to prevent excessive direct tunneling would still behave like a sub-1 nm SiO2.
 
All of the above is enough to put Gd2O3 in the spotlight. And, by the way, as some reports indicate, it also shows good promise in combination with GaAs.
 
Conclusion from these comments is that we are digging deeper and deeper into the periodic table to meet the needs of high-end semiconductor technology. As I said earlier (see post of January 12, 2010), this is an era of materials…..

Posted by Jerzy Ruzyllo at 08:04 PM | Semiconductors | Comments (0) | Link


Thursday, May 20, 2010

Oxides of rare earth metals

I am glad to be back after the long break as there are several interesting issues on which I would like to comment.
 
First, in the spirit of my earlier post (”
Era of materials and elaborate material systems” of January 12, 2010) a quick observation with regard to the still expanding pool of elements from which semiconductor researchers and engineers are drawing to build better performing devices. Most you may not remember it, but, as I was commenting earlier, for years it was all about silicon, oxygen, nitrogen, and aluminum. It was all that was needed to fabricate most of the devices including early ICs. Then the copper joined in, then … Well, as the needs are growing and complexity of devices increases rapidly, it seems as almost every element in the periodic table is of potential interest to the semiconductor community these days.

 
Let’s consider gate dielectrics for instance. After exploring transition metals oxides (e.g. HfO2, ZrO2 TiO2, Ta2O5 etc.), and focusing attention on hafnia, the search for yet the other substitutes for the SiON based dielectrics digs even deeper into the periodic table. Oxides of rare earth metals consisting mostly of lanthanides (look for them at the bottom of the periodic table) attracted a great deal of attention recently.


How about gadolinium oxide (Gd2O3 ) also know as gadolinia? To the old-time “semiconductorer” such as me it sounds rather exotic. I will be back with some more specific comments on gadolinia soon.

Posted by Jerzy Ruzyllo at 07:08 PM | Semiconductors | Comments (7) | Link


Sunday, February 14, 2010

On sabbatical

It’s been a while since I posted the last blog. While on sabbatical and on the go since the beginning of the Spring semester I don’t get much time to do fun things such as occasional blogging. 

For my sabbatical I ended up as a Visiting Professor at the Warsaw University of Technology in Poland. This prestigious school (Warsaw Tech in my mind), which happens to be my Alma Matter by the way, is considered to be the best technical school in Poland. I enjoy very much the experience of temporarily going back to my roots after 25 years at Penn State.
 
Besides working on the joint research projects, frequent seminars and workshops I’ve also got inadvertently involved in the discussion concerning reforms of the system of higher education in Poland. A major makeover has been in the plans for quite some time, but now the process has entered a stage of very extensive discussions and negotiations.
 
I don’t have enough of the contact with the workings of the system of higher education in Poland these days to formulate firm opinions. Still, after going through the entire process of scientific maturation in Poland (M.Sc., Ph.D, and “habilitation”) and then partially repeating it in the major research university in the US (tenure track, tenure, Associate Professorship and then Full Professorship) I can see things in somewhat special way.
 
One interesting difference which was always there, but which earlier didn’t catch my eye as clearly as it does now, is the process of hiring of the young assistants professors, straight after getting a Ph.D., by the Polish universities. It’s almost uniquely their own graduates that are being hired which means that for all practical purposes a Ph.D. adviser becomes a boss of the young academic apprentice. This tradition is not serving well a community as it promotes self-breeding and hampers innovative thinking and scientific independence of the youngsters. At Penn State, and it seems to be a rule in academic institutions across the US, hiring of our own Ph.Ds for academic positions is prohibited and the rule is strictly enforced.
 
Another observation, and again, the one that concerns something I grew up with and this something never seemed unusual to me, is a bit of a ”professormania” I did take note of not only in Poland, but in some other European countries as well. A position, or a title of a Professor itself rather than scientific/teaching excellence often appears to be a dominant goal of an academic career. Some rebalancing of priorities in this regard would serve Polish academic community well, I think.

Posted by Jerzy Ruzyllo at 04:44 PM | Semiconductors | Comments (1) | Link


Tuesday, January 12, 2010

Era of materials and elaborate material systems

At various times over the years, various elements of semiconductor science and engineering were defining progress. Not long ago, when silicon was a sole ruler, the progress was riding mainly on the shoulders of improvements in process technology. At that time, developments that were punctuating the advancements were basically synonymous with what was going on in high-end logic and memory IC technology.

 

In the very old days ion implantation pushing aside doping by diffusion was a hit (even earlier diffusion replaced alloyed junctions by the way), then RIE came about as a savior in etch technology, then its HDP version, then CMP, supercritical fluid cleaning, etc.  And of course photolithography with its developments was continuously looming over the horizon –steppers, g-line, i-line, excimer lasers, phase shift masks, immersion lithography were defining the progress.

 

While all this was happening not much was changing in materials (with an exception of copper replacing aluminum as an interconnect material) and device configuration. It was all based on silicon (single-crystal Si, poly-Si, SiO2, Si3N4) and planar CMOS was a device benchmark.

 

During the last decade or so the paradigm has shifted significantly. It is all about the materials and elaborately configured materials systems these days. Even the latest process technology related breakthrough, introduction of ALD into the mainstream manufacturing, was driven solely by the material related needs (introduction of high-k gate dielectrics). Other than that, on both ends of the line, front and back, high-end material and device engineering determine the progress. For instance, high mobility channel materials, SiGe and SiC stressors, high-k dielectric gate stack engineering, new generation of ILDs , TSVs, etc,etc.…. Even silicon substrate itself must be heavily engineered to meet emerging needs. Furthermore, needs of photovoltaics, organic semiconductor technology, printed large area electronics and photonics, flexible substrates, MEMS/NEMS, opportunities in advancements in TFT technology, 2D (graphene for instance), 1D (nanowires), zeroD (nanodots) material systems, ferromagnetic semiconductors  etc. etc., spread semiconductor innovation efforts well beyond mainstream digital IC territory.

 

All this is breathing fresh air into semiconductor research. It is no longer that one must have 300 mm wafer capability, at least class 10 clean-room and 193 nm exposure tools to do research that have any relevance. The window for innovations is wide open and the reliance on the highest end tool is lesser than in not too remote past. Let’s hope funding will be sufficient to allow semiconductor R&D community to fully spread its wings

Posted by Jerzy Ruzyllo at 08:42 PM | Semiconductors | Comments (0) | Link


Saturday, December 26, 2009

Graphene comes to life

Well over a year ago, on April 2, 5, and 15, 2008 to be exact, I posted few comments on graphene. I marveled about unique properties of this 2D carbon and, just like most everybody, considered it to be a very promising material for the future. Somehow, I felt good about grapahene’s prospects because I could see the path for its integration into the mainstream MOSFET technology.
 
During the recent IEDM, papers devoted to graphene convinced me that we are no longer talking about graphene just in terms of the “promise”. Based on the review papers presented it looks like reports on the fully functional FETs with graphene channels fabricated using various techniques, and on various substrates, abound. For instance, devices with reported cut-off frequency up to 50 GHz rather convincingly demonstrate the potential of graphene for RF applications.
 
Overall, I was surprised to see how advanced is the exploration of graphene in the real-life applications.  

Posted by Jerzy Ruzyllo at 08:11 PM | Semiconductors | Comments (4) | Link


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Jerzy Ruzyllo is a Distinguished Professor of Electrical Engineering and Professor of Materials Science and Engineering at Penn State and in his spare time he likes to blog about semiconductors and related topics.


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Recent posts
Interesting times
Is there enough gallium?
Nanotechnology - "hard" and "soft"
Cheap, highest quality substrate?
Nano-ordered semiconductors
Gadolinia story
Oxides of rare earth metals
On sabbatical
Era of materials and elaborate material systems
Graphene comes to life


Categories
Semiconductors





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