Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
zirconium silicate, ZrSiO4  dielectric material featuring dielectric constant about 15; thermodynamically stable with Si; in contact with Si combines characteristics of silicon dioxide,SiO2,and zirconium oxide, ZrO2; considered to be among prime candidates for a gate dielectric in next generation CMOS devices.
alternative dielectrics  dielectrics featuring dielectric constant k > 3.9 (3.9 is a dielectric constant of SiO2)and acting as gate oxides in silicon MOS devices instead of SiO2; referred to as "high-k dielectrics"; also dielectrics featuring dielectric constant k < 3.9 and used as ILD; referred to as "low-k dielectrics".
hafnium oxide, HfO2  high-k dielectric considered for next generation MOS gates; dielectric constant k ~25; limited thermal stability with silicon; thermally stable up to 700oC.
hafnium silicate, HfSiO4  high-k dielectric considered for next generation MOS gates, k~15-18; thermodynamically stable with silicon.
zirconuim oxide, zirconia, ZrO2  dielectric featuring dielectric constant k in the range of 20-25; thermodynamically stable with silicon but tends to crystallize at about 700 o; considered as an alternative gate dielectric for next generation MOS technology.
gate oxide  a layer of very thin oxide sandwiched between semiconductor and gate contact in MOS devices; can be as thin as 1 nm in advance silicon digital integrated circuits and as thick as 70 nm in discrete power MOSFETs; typically thermally grown SiO2, often nitrided; in ultra-small geometry CMOS ICs SiO2 can be replaced with dielectrics fetauring higher than SiO2 dielectric constant.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.