Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
velocity saturation  at the very high electric field drift velocity of electrons saturates (typically at the level of 107 cm/s); electric field at which saturation occurs is different for different semiconductors; e.g. Si - 107 cm/s, GaAs - 107 cm/s, 6H-SiC - 2x107 cm/s.
drift velocity  velocity of charge carriers in semiconductor under the influence of electric field; as opposed to carriers in free space carriers in semiconductor are not "infinitely" accelerated by the electric field because of the scattering, and thus, they reach a finite velocity regardless of the period of time over which the field is acting; at a given electric field drift velocity is determined by the mobility of charge carrier.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.