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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
tunnel oxide  oxide in MOS structures so thin that the probability of electron direct tunneling across it (i.e. between metal gate and semiconductor) is very high; in the case of Si-SiO2 based MOS devices significant direct tunneling current is observed for oxides typically less than about 3.0 nm.
direct tunneling  tunneling in MOS structures with ultra-thin oxide (< 4 nm) during which electrons from the conduction band in semiconductor are transferred across the oxide directly (i.e. without changing energy) into the conduction band of metal; probability of direct tunneling is a very strong function of the width of the barrier electron tunnels through (oxide thickness in MOS devices)
tunneling, tunneling current  transport of electron across the potential barrier without changing its energy; as opposed to electron transport "over" the barrier (thermionic emission) in which case its energy is must be changed; tunneling probability is a strong function of the width ofpotential barrier; examples: tunneling across the potential barrier at the metal-semiconductor contact, or across the potential barrier at the p-n junction, or across an oxide (direct tunneling for oxide thinner than about 3 nm, Fowler-Nordheim tunneling for oxide 5-10 nm thick) in MOS structure.
gate oxide  a layer of very thin oxide sandwiched between semiconductor and gate contact in MOS devices; can be as thin as 1 nm in advance silicon digital integrated circuits and as thick as 70 nm in discrete power MOSFETs; typically thermally grown SiO2, often nitrided; in ultra-small geometry CMOS ICs SiO2 can be replaced with dielectrics fetauring higher than SiO2 dielectric constant.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.