Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
threshold voltage,VT  voltage applied to the gate of a field effect transistor (FET) that is necessary to open a conductive channel between source and drain; in the case of MOSFET voltage necessary for the inversion layer to be formed at the semiconductor surface.
channel  high conductivity region connecting source and drain in Field Effect Transistors; conductivity of channel is controlled by a gate voltage; depending on the gate voltage channel conductivity can be very high (channel "closed" or very high (channel "open"; by turning channel "on" and "off" switching in FETs is accomplished.
inversion   a region at the surface the semiconductor in a MOS device where the concentration of minority carriers exceeds that of majority carriers (the situation where minority carrier concentration exceeds the doping concentration is called strong inversion).
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.