Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
silicon nitride, Si3N4  dielectric material with energy gap = 5 eV and density ~3.0 g/cm3; excellent mask (barrier) against oxidation of Si; commonlly used in silicon integrated circuit manufacturing primarily in LOCOS process; not used as a gate dielectric due to inferior interface with silicon and bulk defects; properties depend on deposition method: dielectric strength ~107 V/cm, dielectric constant k ~6-7, bulk resistivity 1015-1017 ohm-cm; deposited by CDV.
ammonia, NH3  toxic gas used in semiconductor processing as a source of atomic nitrogen which can be extracted from ammonia at lower temperature than from molecular nitrogen, N2.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.