Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
silicon carbide, SiC  semiconductor featuring energy gap Eg = 2.9 -3.05 eV (wide bandgap semiconductor), indirect bandgap; SiC can be obtained in several polytypes- most common hexagonal in the form of either 4H or 6H polytypes; parameters vary depending on polytype; higher than Si and GaAs electron saturation velocity; carrier mobility: electrons 100-500 cm2/Vs, holes 20 cm2/Vs; thermal conductivity 3 W/cmK (two times higher than Si); excellent semiconductor, however, difficult and expensive to fabricate in the form of single-crystal wafers; best suited for high power, high temperature devices; also limited use in photonic devices (e.g. substrate for GaN).

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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.