Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
metal MOS gate  for many years metals were not used as gate contact material in MOS/CMOS devices; instead, conducting poly-Si is used due to the work function matching work function of Si substrate (precondition for the low threshold voltage of an MOSFET); metal contacts are re-introduced to the mainstream CMOS technology at the time when high-k dielectrics are replacing SiO2 as a gate oxide in cutting edge CMOS technology(poly-Si forms an SiOx layer at the interface with gate dielectric; also Fermi level pinning may occur); different metals must be used as gate contacts in NMOS and PMOS part of the CMOS cell.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.