Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
cobalt silicide, CoSi2  contact (ohmic) material in Si technology; resistivity 16-20 µohm-cm; formed at 900 oC.
titanium silicide, TiSi2  contact (ohmic) material in Si technology; resistivity 13-16 microohm-cm; formed at 900oC.
nickel silicide, NiSi  contact material in Si technology; resistivity of 14-20 microohm-cm is comparable to TiSi2 and CoSi2 but NiSi features lower temperature of formation: 350-750 oC; also less silicon is consumed to form this silicide (only 1.82 nm of Si is consumed per nm of metal); three different phase are possible depending on temperature of formation; nickel monosilicide (NiSi) is a desired phase due to the lowest resistivity.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright © J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.