Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
capacitance-voltage, C-V, measurements  several parameters of semiconductor materials and structures can be determined by measuring C-V characteristics; routinely used for process diagnostics and monitoring in MOS technology; allows determination of interface trap density, fixed charge and oxide charge.
quasistatic C-V  capacitance-voltage measurement of MOS capacitor performed at very low frequency, e.g. 50 Hz; combined with high-frequency (e.g. 1 MHz) C-V measurements provides quantitative information regarding electronic properties of dielectric-semiconductor interface.
high-frequency C-V  capacitance-voltage measurement carried out at the frequency of 100 kHz and higher (often 1 MHz); in MOS gate characterization often carried out in conjunction with low-frequency (quasistatic) C-V measurement.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.