Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
SILC  Stress Induced Leakage Current; a test designed to study reliability of thin oxides in MOS gates; density of leakage current is measured following electric field stress of the oxide and compared with its density measured before the stress; useful in characterization of ultra-thin oxides in which "hard" breakdown does not occur.
GOI  Gate Oxide Integrity; term implies electrical "integrity" of gate oxide; determined through various current/voltage/electric field stress tests of MOS gate stacks.
leakage current  uncontrolled ("parasitic") current flowing across region(s) of semiconductor structure/device in which no current should be flowing; e.g. current flowing across the gate oxide in MOS structure.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.