Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
R-MOSFET  MOSFET in which gate contact is made out of refractory metal such as tungsten (W), molybdenum (Mo), or tantalum (Ta); advantage: R-metals withstand high temperature, i.e., wafer can be subjected to elevated temperature treatments after gate formation.
gate contact  conducting material (metal, poly Si, or silicide) in the gate structure.
work function difference  defines characteristics of contact between two materials featuring different work function; for conductor-semiconductor contact w.f.d. determines height of potential barrier in the contact plane, and hence, determines whether contact is ohmic or rectifying.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.