Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
PCRAM  Phase-Change RAM; an alternative to conventional charge storage based memories.
DRAM  Dynamic Random Access Memory; memory cell in which digital information (data) is stored in volatile state; information stored is lost unless charge is refreshed periodically (in contrast Static RAM, or SRAM); loses its data when the power supply is removed; key component of digital circuits; the most mass produced type of an integrated circuit.
RAM  Random Access Memory; memory cell designed to store information (data) temporarily.
SRAM  Static Random Access Memory; read-write memory cell; in contrast to DRAM data is stored permanently using combination of transistors (no storage capacitors)and does not need to be refreshed periodically, hence "static"; SRAM cell is significantly larger than DRAM cell.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.