Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
BOX  buried oxide in SOI substrates.
Term (Index) Definition
buried oxide, BOX  oxide layer in SOI substrates; oxide (SiO2) buried in silicon wafer at the depth ranging from less than 100 nm to several micrometers from the wafer surface depending on application; thickness of BOX is typically in the range from about 40 nm to about 100 nm.
bonded SOI  SOI substrates formed by bonding two silicon wafers with oxidized surfaces; following bonding one wafer is polished down to the desired thickness of active layer with interface oxide becoming a buried oxide.
SIMOX,   Separation by IMplantation of OXygen; common method used to fabricate SOI substrates; oxygen ions are implanted into Si substrate and form a buried oxide layer.
Term (Index) Definition
SMIF box, SMIF pod  box (container) adapted to SMIF standards and used to transfer wafers between SMIF compatible process tools.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.